28-nm FD-SOI Dual-Port SRAM with MSB-Based Inversion Logic for Low ...
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This paper presents low-power and low-energy 8T dual-port SRAM with a novel MSB-based (most-significant-bit-based) inversion logic for an image processor ...
Abstract—This paper presents low-power and low-energy 8T dual-port SRAM with a novel MSB-based (most-significant-bit- based) inversion logic for an image ...
28-nm FD-SOI Dual-Port SRAM with MSB-Based Inversion Logic for Low-Power Deep Learning. December 2018. DOI:10.1109/ICECS.2018.8617885. Conference: 2018 25th ...
Bibliographic details on 28-nm FD-SOI Dual-Port SRAM with MSB-Based Inversion Logic for Low-Power Deep Learning.
Dec 21, 2018 · Haruki Mori, Shintaro Izumi, Hiroshi Kawaguchi, and Masahiko Yoshimoto, “28-nm FD-SOI Dual-Port SRAM with MSB-Based Inversion Logic for Low- ...
28-nm FD-SOI Dual-Port SRAM with MSB-Based Inversion Logic for Low-Power Deep Learning · 森 陽紀 · 陽川 哲也 · 宮内 勇貴 · 山田 和樹 · 和泉 慎太郎 · 吉本 雅彦 · 川口 ...
We designed and fabricated a 512-kb DP-SRAM macro using 28-nm low-power CMOS technology, and confirmed experimentally that the worst Vmin can be successfully ...
*Logic rule based SRAM cell design. FoM [fJ/bit] ... “Full-swing local bitline SRAM architecture based on the 22-nm ... low-voltage MRAM design, and energy efficient ...
May 8, 2024 · Shintaro Izumi, Hiroshi Kawaguchi , Masahiko Yoshimoto: 28-nm FD-SOI Dual-Port SRAM with MSB-Based Inversion Logic for Low-Power Deep Learning.
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Which is the best dual port SRAM in 45 nm process technology 8T 10T single end and 10T differential?
... RAM, and second-cache driving/controlling method. Mori et al. 2018 28-nm FD-SOI Dual-Port SRAM with MSB-Based Inversion Logic for Low-Power Deep Learning.