This paper reports a novel 0.8 V content addressable memory (CAM) cell circuit with a fast tag-compare capability using the bulk PMOS dynamic-threshold ...
This paper reports a novel 0.8V content addressable memory (CAM) cell circuit with a fast tag-compare ca- pability using the bulk PMOS dynamic-threshold (BP ...
0.8 V CMOS content-addressable-memory (CAM) cell circuit with a ...
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This paper reports a novel 0.8 V content addressable memory (CAM) cell circuit with a fast tag-compare capability using the bulk PMOS dynamic-threshold ...
Bibliographic details on 0.8 V CMOS content-addressable-memory (CAM) cell circuit with a fast tag-compare capability using bulk PMOS dynamic-threshold ...
0.8 V CMOS content-addressable-memory (CAM) cell circuit with a fast tag-compare capability using bulk PMOS dynamic-threshold (BP-DTMOS) technique based on ...
This paper reports a novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS ...
This paper reports a 0.5V bulk PMOS dynamic-threshold technique enhanced with dual threshold (MTCMOS): BP-DTMOS-DT for design optimization of low-power SOC ...
Apr 25, 2024 · 0.8 V CMOS content-addressable-memory (CAM) cell circuit ... DTMOS) technique based on standard CMOS technology for low-voltage VLSI systems.
Kuo, “0.8 V CMOS content-addressable-memory (CAM) cell circuit with a fast tag-compare capability using bulk PMOS dynamic-threshold (BP-DTMOS) technique based ...
Shen, E., Kuo, J.B.: 0.8V CMOS CAM Cell Circuit with a Fast Tag-Compare Capability. Using Bulk PMOS Dynamic-Threshold (BP-DTMOS) Technique Based on Standard.