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→Characterization: hyperlinked and removed unnecessary space and reformatted numbered list
 
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An analysis of systematic variation was performed by Schemmert and Zimmer in 1974 with their paper on threshold-voltage sensitivity.<ref>W. Schemmert, G. Zimmer, "[https://web.archive.org/web/20180814200945/https://ieeexplore.ieee.org/abstract/document/4245073/ Threshold-voltage sensitivity of ion-implanted m.o.s.transistors due to process variations]." ''Electronics Letters, Volume 10, Issue 9'', May 2, 1974, pp. 151-152</ref> This research looked into the effect that the oxide thickness and implantation energy had on the [[threshold voltage]] of [[MOSFET#Metal.E2.80.93oxide.E2.80.93semiconductor_structure|MOS]] devices.
 
sourcesSources of variations include:
 
1)# gate oxide thickness,
2)# random dopant fluctuations, and
3)# Devicedevice Geometry,geometry Lithographyand lithography in nanometer region.
 
== Characterization ==
Semiconductor foundries run analyses on the variability of attributes of transistors (length, width, oxide thickness, etc.) for each new process node. These measurements are recorded and provided to customers such as fabless semiconductor companies. This set of files are generally referred to as "model files" in the industry and are used by EDA tools for simulation of designs.
=== FEOL ===
Typically process models (example [[HSPICE ]]) include [[process corners]] based on [[Front end of line|'''F'''ront '''E'''nd '''O'''f '''L'''ine]] conditions. These often are centered at a typical or nominal point and will also contain Fast and Slow corners often separated into Ntype and Ptype corners that affect the non-linear active N+ / P+ devices in different ways. Examples are '''TT''' for nominal N+ and P+ transistors, '''FF''' for fast N+ and P+ transistors, '''FS''' for fast N+ and slow P+ transistors, etc.
 
=== BEOL ===
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