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- research-articleMarch 2021
Surface roughness and crystallinity of silicon solar cells irradiated by ultraviolet femtosecond laser pulses
Electronics and Communications in Japan (WECJ), Volume 104, Issue 1Pages 3–9https://doi.org/10.1002/ecj.12287AbstractNano/microfabrication experiments on the surface of silicon solar cell are performed by ultraviolet femtosecond laser in the fluence range from 0.10 to 0.70 J/cm2. The surface morphology change of sample was observed by a laser scanning microscopy ...
- research-articleSeptember 2020
Wiring techniques for large size silicon probe using electroplating
Electronics and Communications in Japan (WECJ), Volume 103, Issue 10Pages 44–52https://doi.org/10.1002/ecj.12266AbstractTo realize an uniformization of wiring thickness on a large size silicon probe, a design of wiring to supply current and electroplating conditions were analytically and experimentally evaluated. Circuit simulations adopted with nonlinear ...
- research-articleMay 2020
BER performance of OCDMA system based on optimised 2D PhC passive encoder
IET Communications (CMU2), Volume 14, Issue 8Pages 1268–1274https://doi.org/10.1049/iet-com.2019.0567This study introduces an accurate design and optimisation of a passive optical code division multiple access (OCDMA) network encoder using the coupled cavity waveguide (CCW) as an optical delay line. Such CCW has the capability of providing more time ...
- research-articleJune 2018
Structural optimization of silicon for high efficiencies of light emission
Electronics and Communications in Japan (WECJ), Volume 101, Issue 7Pages 48–55https://doi.org/10.1002/ecj.12091AbstractConventional metal patterns in integrated circuits are known to exhibit drawbacks such as signal delays and heat generation. The use of the silicon photonics technology has been proposed to overcome these drawbacks. Silicon‐based materials and ...
- research-articleSeptember 2017
A high-power multi-port 0.46THz radiation source in nano-scale silicon technology using fundamental-frequency oscillation beyond fMAX of transistors
NanoCom '17: Proceedings of the 4th ACM International Conference on Nanoscale Computing and CommunicationArticle No.: 26, Pages 1–6https://doi.org/10.1145/3109453.3122843A silicon-integrated vertical IMPATT (V-IMPATT) diode is introduced and its implementation in a silicon-germanium (SiGe) BiCMOS process is presented. The device exhibits active behavior and negative resistance at > 400GHz, far above the fMAX of ...
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- research-articleJune 2016
Invited - Integrated millimeter-wave/terahertz sensor systems for near-field IoT
DAC '16: Proceedings of the 53rd Annual Design Automation ConferenceArticle No.: 144, Pages 1–6https://doi.org/10.1145/2897937.2907985The emergence of Internet of Things (IoT) has brought forth new opportunities by seamlessly integrating the physical world using computing, sensing, and wireless networks, transforming it into a cyber-physical system. An essential building block ...
- research-articleMarch 2016
Double Layer Anti-Reflective Coating of SiO2/ZnO for Photovoltaic Cell
WIR '16: Proceedings of the ACM Symposium on Women in Research 2016Pages 109–111https://doi.org/10.1145/2909067.2909087In this paper silicon based photo voltaic (PV) cells has been designed using double layer (SiO2/ZnO) anti-reflective coating (ARC). Here reflection spectrum of single layer anti-reflective coating (SLAR) of SiO2&ZnO individually and double layer anti-...
- research-articleNovember 2015
Electrochemical Properties of Electrode Comprising of Si Nanopowder Inserted in an Enclosed Structure in C-Coated AAO by Using a Facile Method
IEEE Transactions on Nanotechnology (ITN), Volume 14, Issue 6Pages 1040–1045https://doi.org/10.1109/TNANO.2015.2463687Si, Sn, Al, Ge, and their compounds are some of the potential candidates for use as anodic materials in Li-ion secondary batteries. Especially, Si is a promising anode material for Li-ion batteries due to the high theoretical capacity of 4200 mAh/g-based ...
- articleOctober 2015
Solar cells and nanotechnology: Bibliometric analysis of publications that are reflected in RZh Fizika VINITI RAN and the Web of Science database
Scientific and Technical Information Processing (SPSTIP), Volume 42, Issue 4Pages 294–298https://doi.org/10.3103/S0147688215040127Solar cells of the third generation (after the bulk and thin-film ones that are mainly based on inorganic semiconductors, mostly of silicon) use the leading technologies of the 21st century, including nanotechnologies based on nanomaterials, mainly ...
- research-articleMay 2013
Predicting future technology performance
DAC '13: Proceedings of the 50th Annual Design Automation ConferenceArticle No.: 32, Pages 1–6https://doi.org/10.1145/2463209.2488774In this paper we highlight the important role of full-scale 3D Ensemble Monte Carlo (EMC) transport simulations in the performance analysis of contemporary and future decananometer MOSFETs. Considering both electron and hole transport in alternative ...
- ArticleSeptember 2012
Simulation Study of Non Ionic Implantation Process: Thinner Electrical Interfacial Semiductor Junction Formation Using Ionic Diffusion Process
CIMSIM '12: Proceedings of the 2012 Fourth International Conference on Computational Intelligence, Modelling and SimulationPages 431–433https://doi.org/10.1109/CIMSim.2012.94Further miniaturization of large scaled integrated circuit is hinder by ability to overcome some difficulties with narrower junction formation. A Low energy ion implantation is the most commonly considered the technique of this time but this techniques ...
- ArticleSeptember 2012
Low Resistance Electrical Layer Formation: A Simulation Study of Diffusive Rapid Thermal Process on Implanted Dopant Species for Electronics Active Devices
CIMSIM '12: Proceedings of the 2012 Fourth International Conference on Computational Intelligence, Modelling and SimulationPages 428–430https://doi.org/10.1109/CIMSim.2012.93A simple and economical spin-on-dopants simulation technique for ultra thin layer formation is presented; the Ultra thin for the purpose of shallow junction formation in large scaled integrated technology is one of the most challenging in device ...
- ArticleAugust 2012
Electronic Structures of One-dimensional Si Clusters with B and P as Codopants
ICCIS '12: Proceedings of the 2012 Fourth International Conference on Computational and Information SciencesPages 413–416https://doi.org/10.1109/ICCIS.2012.141Recent experiments have shown that increased substitutionality of high-concentration acceptor atoms in Si occurs in the presence of donor atoms. The inf1uence of donor atoms on the electronic structures of the acceptor atoms is understandable when the ...
- articleJanuary 2012
Westinghouse: Microcircuit Pioneer from Molecular Electronics to ICs
IEEE Annals of the History of Computing (ANHC), Volume 34, Issue 1Pages 74–82https://doi.org/10.1109/MAHC.2012.15In the late 1950s and early 1960s, Westinghouse Electric engineers and scientists pursued research and developed many innovations in semiconductor design and manufacturing that found widespread use throughout the industry and later contributed to the ...
- opinionFebruary 2011
Transitioning from Microelectronics to Nanoelectronics
By breaking down abstractions and facing challenges in an integrated fashion from the devices up, designers could develop novel systems that ultimately go beyond von Neumann processing on silicon.
- research-articleJanuary 2011
Large-Scale Fabrication of Ordered Silicon Nanotip Arrays Used for Gas Ionization in Ion Mobility Spectrometers
IEEE Transactions on Nanotechnology (ITN), Volume 10, Issue 1Pages 50–52https://doi.org/10.1109/TNANO.2010.2053046The 9/11 events have led to an increase in the request for sensors and sensor systems that can detect rapidly, efficiently, and at moderate cost trace explosives and a whole range of toxic substances at diverse control points, e.g., at airports and ...
- ArticleOctober 2010
Computing photon absorption currents in semiconductor arrays under full depletion condition
In this paper, the effects of absorbed photons in pixel and stripped arrays were analyzed using the Ramo theorem. In fact, absorbing a photon in an array induces a current in the cell that has absorbed the photon and in its neighboring cells. This ...
- research-articleSeptember 2010
Nanocrystalline Piezoresistive Polysilicon Film by Aluminum-Induced Crystallization for Pressure-Sensing Applications
IEEE Transactions on Nanotechnology (ITN), Volume 9, Issue 5Pages 640–646https://doi.org/10.1109/TNANO.2010.2054104Nanocrystalline piezoresistive polysilicon films were obtained at low temperatures by aluminum-induced crystallization (AIC). The films exhibited granular structure with good polycrystalline properties. A piezoresistive pressure sensor was fabricated on ...
- research-articleJuly 2010
Gold/Molecule/p ^+ Si Devices: Variable Temperature Electronic Transport
IEEE Transactions on Nanotechnology (ITN), Volume 9, Issue 4Pages 494–503https://doi.org/10.1109/TNANO.2009.2030800Although a considerable amount of experimental and theoretical work has been devoted to nanoelectronic systems with molecular components, relatively little work has been done on molecular electronic devices on technologically relevant substrates such as ...
- research-articleMay 2010
Design and Implementation of Functional Nanoelectronic Interfaces With Biomolecules, Cells, and Tissue Using Nanowire Device Arrays
IEEE Transactions on Nanotechnology (ITN), Volume 9, Issue 3Pages 269–280https://doi.org/10.1109/TNANO.2009.2031807Nanowire FETs (NWFETs) are promising building blocks for nanoscale bioelectronic interfaces with cells and tissue since they are known to exhibit exquisite sensitivity in the context of chemical and biological detection, and have the potential to form ...