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Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement

Published: 08 June 2008 Publication History

Abstract

Magnetic Random Access Memory (MRAM) has been considered as a promising memory technology due to many attractive properties. Integrating MRAM with CMOS logic may incur extra manufacture cost, due to its hybrid magnetic-CMOS fabrication process. Stacking MRAM on top of CMOS logics using 3D integration is a way to minimize this cost overhead. In this paper, we discuss the circuit design issues for MRAM, and present the MRAM cache model. Based on the model, we compare MRAM against SRAM and DRAM in terms of area, performance, and energy. Finally we conduct architectural evaluation for 3D microprocessor stacking with MRAM. The experimental results show that MRAM stacking offers competitive IPC performance with a large reduction in power consumption compared to SRAM and DRAM counterparts.

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      cover image ACM Conferences
      DAC '08: Proceedings of the 45th annual Design Automation Conference
      June 2008
      993 pages
      ISBN:9781605581156
      DOI:10.1145/1391469
      • General Chair:
      • Limor Fix
      Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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      Published: 08 June 2008

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      1. 3D stacking
      2. MRAM

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      Cited By

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      • (2024)Streaming Algorithms with Few State ChangesProceedings of the ACM on Management of Data10.1145/36511452:2(1-28)Online publication date: 14-May-2024
      • (2024)Hybrid Magneto-electric FET-CMOS Integrated Memory Design for Instant-on ComputingProceedings of the Great Lakes Symposium on VLSI 202410.1145/3649476.3660361(770-775)Online publication date: 12-Jun-2024
      • (2024)StreamPIM: Streaming Matrix Computation in Racetrack Memory2024 IEEE International Symposium on High-Performance Computer Architecture (HPCA)10.1109/HPCA57654.2024.00031(297-311)Online publication date: 2-Mar-2024
      • (2023)Tailors: Accelerating Sparse Tensor Algebra by Overbooking Buffer CapacityProceedings of the 56th Annual IEEE/ACM International Symposium on Microarchitecture10.1145/3613424.3623793(1347-1363)Online publication date: 28-Oct-2023
      • (2023)HighLight: Efficient and Flexible DNN Acceleration with Hierarchical Structured SparsityProceedings of the 56th Annual IEEE/ACM International Symposium on Microarchitecture10.1145/3613424.3623786(1106-1120)Online publication date: 28-Oct-2023
      • (2023)A Survey of Memory-Centric Energy Efficient Computer ArchitectureIEEE Transactions on Parallel and Distributed Systems10.1109/TPDS.2023.329759534:10(2657-2670)Online publication date: Oct-2023
      • (2023)Sparse Code With Minimum Hamming Distance of Three for Spin-Torque Transfer Magnetic Random Access MemoryIEEE Access10.1109/ACCESS.2023.332425511(114071-114079)Online publication date: 2023
      • (2023)Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access MemoryIEEE Access10.1109/ACCESS.2023.326352711(33005-33013)Online publication date: 2023
      • (2023)Efficient Deep Learning Using Non-volatile Memory Technology in GPU ArchitecturesEmbedded Machine Learning for Cyber-Physical, IoT, and Edge Computing10.1007/978-3-031-19568-6_8(225-252)Online publication date: 1-Oct-2023
      • (2022)Elastic adaptive prefetching for non-volatile cache in IoT terminalsIEICE Electronics Express10.1587/elex.19.2022022519:13(20220225-20220225)Online publication date: 10-Jul-2022
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