Nothing Special   »   [go: up one dir, main page]

skip to main content
research-article

TAS-MRAM-Based Low-Power High-Speed Runtime Reconfiguration (RTR) FPGA

Published: 01 June 2009 Publication History

Abstract

As one of the most promising Spintronics applications, MRAM combines the advantages of high writing and reading speed, limitless endurance, and nonvolatility. The integration of MRAM in FPGAs allows the logic circuit to rapidly configure the algorithm, the routing and logic functions, and easily realize the Runtime Reconfiguration (RTR) and multicontext configuration. However, the conventional MRAM technology based on the Field Induced Magnetic Switching (FIMS) writing approach consumes very high power, large circuit surfaces, and produces high disturbance between memory cells. These drawbacks prevent FIMS-MRAM’s further development in memory and logic circuit. Thermally Assisted Switching (TAS)-based MRAM is then evaluated to address these issues. In this article, some design techniques, novel computing architecture, and logic components for FPGA logic circuits based on TAS-MRAM technology are presented. By using STMicroelectronics CMOS 90nm technology and a complete TAS-MTJ spice model, some chip characteristic results such as the programming latency (~25ns) and power dissipation (~124pJ) have been calculated or simulated to demonstrate the expected performance of TAS-MRAM-based FPGA logic circuits.

References

[1]
Brown, S., Francis, R., Rose, J., and Vranesic, Z. 1992. Field-Programmable Gate Arrays. Kluwer Academic.
[2]
International Technology Roadmap for Semiconductors (ITRS). 2007. Process integration, devices and structures. 24--25.
[3]
Gallagher, W. J. and Parkin, S. S. P. 2006. Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip. IBM J. Res. Develop. 5--23.
[4]
Morris, K. 2005. Flash news flash. FPGA Program. Logic J. 1--4.
[5]
Kim, N. S. 2003. Leakage current: Moore’s law meets the static power. IEEE Comput. Soc. 68--74.
[6]
Prejbeanu, I. L., Kula, W., Ounadjela, K., Sousa, R. C., Redon, O., Dieny, D., and Nozieres, J. P. 2004. Thermally assisted switching in exchange-biased storage layer magnetic tunnel junctions. IEEE Trans. Magnetics, 2625--2627.
[7]
Prejbeanu, I. L., Kerekes, M., Sousa, R. C., Sibuet, H., Redon, O., Dieny, D. and Nozieres, J. P. 2007. Thermally assisted MRAM. J. Phys. Condensed Matter 19, 165--218.
[8]
Rappitsch, G. 2003. Statistical SPICE modeling for analog circuit design. In Proceedings of the IEEE ESSCIRC.
[9]
Redon, O., Kerekes, M., Sousa, R., Prejbeanu, L., Sibuet, H., Ponthennier, F., Persico, A., and Nozières, J. P. 2005. Thermo assisted MRAM for low power applications. In Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD’05). 113--114.
[10]
STMicroelectronics. 2007. Manuel of design kit for CMOS 90nm.
[11]
Stojanovic, V. and Oklobdzija, V. G. 1999. Comparative analysis of master-slave latches and flip-flops for high-performance and low-power systems. IEEE J. Solid-State Circ. 536--548.
[12]
Sun, J. Z. 2006. Spin angular momentum transfer in current-perpendicular nanomagnetic junctions. IBM J. Res. Develop. 81--100.
[13]
Wolf, S., Awschalom, D., Buhrman, R., Daughton, J., Von Moulnar, S., Roukes, M., Chtchelkanova, A., and Treger, M. 2001. Spintronics: A spin-based electronics vision for the future: Magnetism and materials. Science, 1488--1495.
[14]
Xilinx Corp. Virtex-4 configuration guide. http://www.xilinx.com/support/documentation/user_guides/ug071.pdf.
[15]
Yuasa, S., Nagahama, T., Fukushima, A., Suzuki, Y., and Ando, K. 2004. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions. Nat. Mater. 868--871.
[16]
Zhao, W., Belhaire, E., Javerliac, J., Chappert, C., and Dieny, B. 2006a. Evaluation of a nonvolatile FPGA based on MRAM technology. In Proceedings of the IEEE International Conference on Integrated Circuit Design and Technology. 17--21.
[17]
Zhao, W., Belhaire, E., Javerliac, J., Chappert, C., and Dieny, B. 2006b. A nonvolatile flip-flop in magnetic FPGA chip. In Proceedings of the IEEE International Conference on Design and Test of Integrated Systems in Nanoscale Technology. 323--326.
[18]
Zhao, W., Belhaire, E., Chappert, C., Jacquet, F., and Mazoyer, P. 2008. New nonvolatile logic based on Spin-MTJ. Phys. Status Solidi-a: Appl. Mater. Sci. 205, 6, 1373--1377.

Cited By

View all

Index Terms

  1. TAS-MRAM-Based Low-Power High-Speed Runtime Reconfiguration (RTR) FPGA

    Recommendations

    Comments

    Please enable JavaScript to view thecomments powered by Disqus.

    Information & Contributors

    Information

    Published In

    cover image ACM Transactions on Reconfigurable Technology and Systems
    ACM Transactions on Reconfigurable Technology and Systems  Volume 2, Issue 2
    June 2009
    211 pages
    ISSN:1936-7406
    EISSN:1936-7414
    DOI:10.1145/1534916
    Issue’s Table of Contents
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

    Publisher

    Association for Computing Machinery

    New York, NY, United States

    Publication History

    Published: 01 June 2009
    Accepted: 01 November 2008
    Revised: 01 October 2008
    Received: 01 July 2008
    Published in TRETS Volume 2, Issue 2

    Permissions

    Request permissions for this article.

    Check for updates

    Author Tags

    1. FPGA
    2. Look-Up Table (LUT)
    3. MRAM
    4. MTJ
    5. Simulation
    6. TAS
    7. architecture
    8. dynamical reconfiguration
    9. flip-flop
    10. low power
    11. multi-context configuration
    12. nonvolatile

    Qualifiers

    • Research-article
    • Research
    • Refereed

    Contributors

    Other Metrics

    Bibliometrics & Citations

    Bibliometrics

    Article Metrics

    • Downloads (Last 12 months)13
    • Downloads (Last 6 weeks)2
    Reflects downloads up to 25 Nov 2024

    Other Metrics

    Citations

    Cited By

    View all
    • (2024)MRAM-Based FPGAs: A SurveyComputer Memory and Data Storage10.5772/intechopen.108212Online publication date: 10-Jan-2024
    • (2021)Spintronic devices: a promising alternative to CMOS devicesJournal of Computational Electronics10.1007/s10825-020-01648-6Online publication date: 19-Jan-2021
    • (2019)Magnetic Tunnel Junction ApplicationsSensors10.3390/s2001012120:1(121)Online publication date: 24-Dec-2019
    • (2019)Reconfigurable logic for carry-out computing in 1-bit full adder using a single magnetic tunnel junctionSolid-State Electronics10.1016/j.sse.2019.02.001Online publication date: Mar-2019
    • (2018)Racetrack Memory-Based Nonvolatile Storage Elements for Multicontext FPGAsIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2015.247470624:5(1885-1894)Online publication date: 29-Dec-2018
    • (2017)CP-FPGA: Energy-Efficient Nonvolatile FPGA With Offline/Online Checkpointing OptimizationIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2017.268046425:7(2153-2163)Online publication date: Jul-2017
    • (2016)Scalable Adaptive Spintronic Reconfigurable Logic Using Area-Matched MTJ DesignIEEE Transactions on Circuits and Systems II: Express Briefs10.1109/TCSII.2016.253209963:7(678-682)Online publication date: Jul-2016
    • (2016)Routing path reuse maximization for efficient NV-FPGA reconfiguration2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC)10.1109/ASPDAC.2016.7428038(360-365)Online publication date: Jan-2016
    • (2015)SpintronicsACM Journal on Emerging Technologies in Computing Systems10.1145/266335112:2(1-42)Online publication date: 2-Sep-2015
    • (2015)Soft Error-Tolerant Design of MRAM-Based Nonvolatile Latches for Sequential LogicsIEEE Transactions on Magnetics10.1109/TMAG.2014.237527351:6(1-14)Online publication date: Jun-2015
    • Show More Cited By

    View Options

    Login options

    Full Access

    View options

    PDF

    View or Download as a PDF file.

    PDF

    eReader

    View online with eReader.

    eReader

    Media

    Figures

    Other

    Tables

    Share

    Share

    Share this Publication link

    Share on social media