article

Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O 5

Authors:

Musarrat Hasan,

Chandan B. Samantaray,

Hyunsang HwangAuthors Info & Claims

Microelectronic Engineering, Volume 80

Pages 260 - 263

Published: 01 June 2005 Publication History

Abstract

We investigated the reproducible and memory resistance switching characteristics of pulsed-laser deposited thin polycrystalline Nb"2O"5 film for application to nonvolatile memory devices. Reproducible switching cycles were observed, and the resistance ratios of two distinct conduction states were approximately two orders of magnitude. Two resistance switching states were also obtained for pulse duration as much as 10 ns. The degradation of both resistance states at 125 ^oC, indicating memory characteristics, was expected within 8 percent for 10 years. We also investigated the temperature-dependent conduction mechanisms of the high resistance state and the low resistance state, and we discussed a plausible resistance switching mechanism.

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Cited By

Spiga SLamperti AWiemer CPerego MCianci ETallarida GLu HAlia MVolpe FFanciulli M(2019)Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer depositionMicroelectronic Engineering10.1016/j.mee.2008.09.01885:12(2414-2419)Online publication date: 1-Jan-2019
https://dl.acm.org/doi/10.1016/j.mee.2008.09.018

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Published In

cover image Microelectronic Engineering

Microelectronic Engineering Volume 80, Issue

June, 2005

448 pages

ISSN:0167-9317

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Copyright © Elsevier B.V. © 2005.

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Elsevier Science Ltd.

United Kingdom

Publication History

Published: 01 June 2005

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Cited By

Spiga SLamperti AWiemer CPerego MCianci ETallarida GLu HAlia MVolpe FFanciulli M(2019)Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer depositionMicroelectronic Engineering10.1016/j.mee.2008.09.01885:12(2414-2419)Online publication date: 1-Jan-2019
https://dl.acm.org/doi/10.1016/j.mee.2008.09.018

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