doiSerbia

The effects of doping on the structural, optical and electric properties of Zn4Sb3 material

Vaida Mirela (Politehnica University of Timisoara, Industrial Chemistry and Environmental Engineering Faculty, Timisoara, Romania)
Duteanu Narcis (Politehnica University of Timisoara, Industrial Chemistry and Environmental Engineering Faculty, Timisoara, Romania)
Grozescu Ioan (Politehnica University of Timisoara, Industrial Chemistry and Environmental Engineering Faculty, Timisoara, Romania + National Institute for Research and Development in Electrochemistry and Condensed Matter, Timisoara, Romania)

This paper presents results of the investigations regarding the obtaining and the characterization of the thermoelectric material Zn4Sb3 and (Zn1-xMx)4Sb3 where M = Ag and / or Sn. Obtaining of the materials was realized by melting high purity precursors into an oven where were kept isothermally for 12 hours at 1173 K. X-ray diffraction and scanning electron microscopy were used for structural and morphologic characterization. Optical band gap for each sample was determined from absorbance spectra recorded in the visible range 240-400 nm at room temperature. Electrical resistivity as function of temperature was measured and the electrical band gap was estimated for each of the obtained samples. The semiconducting behavior of the materials was reflected by these.

Keywords: thermoelectric, melting, electrical resistivity, band gap