Abstract
In article the basic is constructive-technological decisions applied in galvanic isolators (GI) with giant magnetoresistive by effect are considered. Results of research of spin-valve magnetoresistive (SVMR) nanostructures with an antiferromagnetic film (Ta–FeNiCo–CoFe–Cu–CoFe–FeNiCo–FeMn–Ta) for creation on their basis domestic digital GI are presented. Are received magnetoresistive elements on the basis of the developed technological processes of formation nanostructures with size SVMR of effect 7–8%, at a room temperature.
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Original Russian Text © P.A. Belyakov, D.V. Kostyuk, I.E. Abanin, V.V. Amelichev, E.P. Orlov, D.V. Vasil’ev, S.I. Kasatkin, A.M. Murav’ev, A.I. Krikunov, S.V. Shamanaev, 2015, published in Datchiki i Sistemy, 2015, No. 4, pp. 32–36.
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Belyakov, P.A., Kostyuk, D.V., Abanin, I.E. et al. Development of galvanic isolators on the basis of nanostructures from spin-valve magnetoresistive effect. Autom Remote Control 77, 2249–2253 (2016). https://doi.org/10.1134/S0005117916120134
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DOI: https://doi.org/10.1134/S0005117916120134