A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement | IEEE Conference Publication | IEEE Xplore
Nothing Special »
Address
:
[go:
up one dir
,
main page
]
Include Form
Remove Scripts
Accept Cookies
Show Images
Show Referer
Rotate13
Base64
Strip Meta
Strip Title
Session Cookies