IP1 dB of -20 dBm, and IIP3 of -10 dBm. The measured double sideband noise figure is 16 dB from 100-kHz to 100-MHz because the SiGe bipolar device has very low 1/f noise corner." />
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10-GHz SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using the Fully Symmetrical and Time-Delay Compensated LO Cells

Tzung-Han WU
Chinchun MENG

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E90-A    No.2    pp.326-332
Publication Date: 2007/02/01
Online ISSN: 1745-1337
DOI: 10.1093/ietfec/e90-a.2.326
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
SiGe BiCMOS,  sub-harmonic mixer,  Gilbert mixer,  self-mixing,  2LO-to-RF isolation,  mixer low frequency noise,  

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Summary: 
A 10-GHz sub-harmonic Gilbert mixer is demonstrated in this paper using the 0.35 µm SiGe BiCMOS technology. The time-delay when the sub-harmonic LO (Local Oscillator) stage generates sub-harmonic LO signals is compensated by using fully symmetrical multiplier pairs. High RF-to-IF isolation and sub-harmonic LO Gilbert cell with excellent frequency response can be achieved by the elimination of the time-delay. The SiGe BiCMOS sub-harmonic micromixer exhibits 17 dB conversion gain, -74 dB 2LO-to-RF isolation, IP1 dB of -20 dBm, and IIP3 of -10 dBm. The measured double sideband noise figure is 16 dB from 100-kHz to 100-MHz because the SiGe bipolar device has very low 1/f noise corner.

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