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Near-infrared optoelectronic synapses based on a Te/α-In2Se3 heterojunction for neuromorphic computing

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Abstract

Neuromorphic computing based on artificial optoelectronic synapses has attracted considerable attention owing to its high time/power efficiency and parallel processing capability. However, existing devices are mainly suitable for only the visible range. Here, high-performance near-infrared optoelectronic memories and synapses were demonstrated using Te/α-In2Se3 heterostructures. Owing to the entangled ferroelectricity-semiconducting properties of α-In2Se3, whose ferroelectric polarizations can be switched by photocarriers that migrated from the Te near-infrared light absorber, the device could be set into a non-volatile high-resistance/low-resistance state through the application of positive gate voltages/near-infrared light pulses. Hence, the device could function as a high-performance photodetector, with a photoresponsive on/off ratio of 5.25 × 104/8.3 × 103 and a specific detectivity of 2.6 × 1011/7.5 × 1010 Jones at 1550/1940 nm. In addition, the device could function as a multi-state optoelectronic synapse with good stability and high linearity; moreover, using the device, we developed an optoelectronic artificial neural network with high recognition accuracies of 100% and 89.9% for a database composed of 64-pixel letters with 10% and 70% noise levels, respectively. Our work provides a feasible avenue for developing neuromorphic networks applicable in the infrared range.

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Acknowledgements

This work was supported by National Key R&D Program of China (Grant Nos. 2021YFA1201500, 2018YFA0703700), National Natural Science Foundation of China (Grant Nos. 91964203, 61974036, 62274046, 22179029, 12204122), Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB44000000), Fundamental Research Funds for the Central Universities (Grant No. 2042021kf0067), and CAS Key Laboratory of Nanosystem and Hierarchical Fabrication. The authors also gratefully acknowledge the support of Youth Innovation Promotion Association CAS.

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Author notes

  1. Yan T and Cai Y C have the same contribution to this work.

Authors and Affiliations

  1. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China

    Tao Yan, Yuchen Cai, Yanrong Wang, Jia Yang, Shuhui Li, Xueying Zhan, Fengmei Wang, Feng Wang & Zhenxing Wang

  2. Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing, 100029, China

    Tao Yan

  3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

    Yuchen Cai, Yanrong Wang, Jia Yang, Shuhui Li, Xueying Zhan, Fengmei Wang, Feng Wang & Zhenxing Wang

  4. Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China

    Ruiqing Cheng & Jun He

Authors
  1. Tao Yan
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  2. Yuchen Cai
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Correspondence to Feng Wang or Zhenxing Wang.

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Figures S1–S16. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Yan, T., Cai, Y., Wang, Y. et al. Near-infrared optoelectronic synapses based on a Te/α-In2Se3 heterojunction for neuromorphic computing. Sci. China Inf. Sci. 66, 160404 (2023). https://doi.org/10.1007/s11432-022-3695-1

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  • DOI: https://doi.org/10.1007/s11432-022-3695-1

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