Abstract
BSIM (Berkeley Short-Channel IGFET) became the first international industry standard model for simulation of MOS integrated circuits in 1997. The cumulative sales of ICs that have been designed with the aid of BSIM and produced for computing, communication, consumer, and industrial applications is estimated to be around 400 billion US dollars. From 0.35 μm CMOS to multi-gate FinFET, BSIM serves a wide range of technologies. Many China educated researchers have contributed to its success.
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This paper is written to celebrate the first 50 years of the teaching careers of Prof. Y. Y. Wang and Prof. F. Q. Yang. The two BSIM research leaders, Chenming Hu and Ping Ko, have had long associations with Prof. Wang, Prof. Yang, and the Institute of Microelectronics, Peking University. Many former students and teachers of the Institute were major contributors to BSIM including the first three staff managers of the BSIM program from 1995–2005, Dr. Yuhua Cheng, Dr. Weidong Liu, and Dr. Xuemei Jane Xi.
Sponsored by SRC and MICRO. Data in Figure 4 are supplied by TI and TSMC
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Hu, C. BSIM—making the first international standard MOSFET model. Sci. China Ser. F-Inf. Sci. 51, 765–773 (2008). https://doi.org/10.1007/s11432-008-0053-x
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DOI: https://doi.org/10.1007/s11432-008-0053-x