Abstract
A output-capacitorless, wide range 0.6–1.8 V/0.4–1.6 V input/output, dual-mode low-dropout regulator with a high-power supply rejection ratio (PSRR) is proposed in this paper. When the input voltage is higher than 1.2 V, the high-voltage mode (HVM) is activated and the input can be directly used in the proposed LDO with high PSRR and high stability. If the input voltage drops below 1.2 V, LDO would be working stably by the charge pump and internal voltage-controlled oscillator in low-voltage mode (LVM). Meanwhile, linearity and load regulations can also be improved through the proposed sub-amplifier transconductance-enhancement compensation method and high-speed transconductance buffer. The verification of design is completed under a standard 0.18 μm CMOS process. The simulation results show that output voltage ranges from 0.4 to 1.6 V while input ranges from 0.6 to 1.8 V, and proposed LDO remains over 50 dB PSRR in HVM mode and 30 dB in LVM mode.
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Data sharing is not applicable to this article as no datasets were generated or analyzed during the current study.
References
N. Adorni, S. Stanzione, A. Boni, A 10-mA LDO With 16-nA IQ and operating from 800-mV supply. IEEE J. Solid-State Circuits 55(2), 404–413 (2020)
H. Cao, X. Yang, W. Li, Y. Ding, W. Qu, An impedance adapting compensation scheme for high current NMOS LDO design. IEEE Trans. Circuits Syst. II Express Briefs 68(7), 2287–2291 (2021)
M. Dini, A. Romani, M. Filippi, M. Tartagni, A nanocurrent power management IC for low-voltage energy harvesting sources. IEEE Trans. Power Electron. 31(6), 4292–4304 (2016)
Q.H. Duong, H.H. Nguyen, J.W. Kong, Multiple-loop design technique for high-performance low-dropout regulator. IEEE J. Solid-State Circuits 52(10), 2533–2549 (2017)
O.Z. Gall, C. Meng, H. Bhamra, A batteryless energy harvesting storage system for implantable medical devices demonstrated in situ. Circuits Syst Signal Process 38, 1360–1373 (2019)
M. Huang, Y. Lu, R.P. Martins, An analog-assisted tri-loop digital low-dropout regulator. IEEE J. Solid-State Circuits 53(1), 20–34 (2018)
K. Keikhosravy, S. Mirabbasi, A 0.13-μm CMOS low-power capacitor-less LDO regulator using bulk-modulation technique. IEEE Trans. Circuits Syst. I Regul. Pap. 61(11), 3105–3114 (2014)
C.J. Leo, M.K. Raja, J. Minkyu, An ultra low-power capacitor-less LDO with high PSR. 2013 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications (IMWS-BIO), (pp. 1–3).
K. Li, C. Yang, T. Guo, Y. Zheng, A multi-loop slew-rate-enhanced NMOS LDO handling 1-A-load-current step with fast transient for 5G applications. IEEE J. Solid-State Circuits 55(11), 3076–3086 (2020)
S.Y. Li, X. Zhao, L.Y. Dong, L.Y. Yu, Y.Q. Wang, Design of a capacitor-less adaptively biased low dropout regulator using recycling folded cascode amplifier. AEU-Int. J. Electron. Commun. 135, 153745 (2021)
L. Liu, J. Mu, N. Ma, An ultra-low-power integrated RF energy harvesting system in 65-nm CMOS process. Circuits Syst Signal Process 35, 421–441 (2016)
M. Ma, X. Cai, J. Jiang, High efficiency cross-coupled charge pump circuit with four-clock signals. Radioelectron. Commun. Syst. 61(3), 565–570 (2018)
H.K. Mahmoud, N.M. Ahmed, H. El-Sayed, F.A.H. Hesham, A hybrid NMOS/PMOS capacitor-less low-dropout regulator with fast transient response for SoC applications. AEU-Int. J. Electron. Commun. 96, 207–218 (2018)
A. Maity, A. Patra, A hybrid-mode operational transconductance amplifier for an adaptively biased low dropout regulator. IEEE Trans. Power Electron. 32(2), 1245–1254 (2017)
P. Manikandan, B. Bindu, Dual-summed flipped voltage follower LDO regulator with active feed-forward compensation. AEU-Int. J. Electron. Commun. 123, 153314 (2020)
F. Montalvo-Galicia, G. Diaz-Arango, C. Ventura-Arizmendi, B. Calvo, M. T. Sanz-Pascual, Comparison of two internal miller compensation techniques for LDO regulators. in 2019 16th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE), (pp. 1–4).
B.M. Moradian, M. Yavari, A Low-power high-gain low-dropout regulator for implantable biomedical applications. Circuits Syst. Signal Process 40, 1041–1060 (2021)
C.-S. Plesa, C. Răducan, A.-T. Grăjdeanu, O. Serpedin, M. Neag, An area-efficient automotive LDO with scalable maximum load current exhibits excellent response to line and load transients. AEU-Int. J. Electron. Commun. 149, 154136 (2022)
C. Shih, K. Chu, Y. Lee, W. Chen, H. Luo, K. Chen, A power cloud system (PCS) for high efficiency and enhanced transient response in SoC. IEEE Trans. Power Electron. 28(3), 1320–1330 (2013)
J. Tang, J. Lee, J. Roh, Low-power fast-transient capacitor-less LDO regulator with high slew-rate class-AB amplifier. IEEE Trans. Circuits Syst. II Express Briefs 66(3), 462–466 (2019)
C. Yang, K. Yea, M. Tan, A 0.5-V capless LDO with 30-dB PSRR at 10-kHz using a lightweight local generated supply. IEEE Trans. Circuits Syst. II Express Briefs 67(10), 1785–1789 (2020)
F. Yang, P.K.T. Mok, A nanosecond-transient fine-grained digital LDO with multi-step switching scheme and asynchronous adaptive pipeline control. IEEE J. Solid-State Circuits 52(9), 2463–2474 (2017)
F. Yang, P. K. T. Mok, 5.11A 65nm inverter-based low-dropout regulator with rail-to-rail regulation and over −20dB PSR at 0.2V lowest supply voltage. in 2017 IEEE International Solid-State Circuits Conference (ISSCC), (pp. 106–107).
W. Yang, Y. Lin, Y. Lo, Design of fast-locked digitally controlled low-dropout regulator for ultra-low voltage input. Circuits Syst Signal Process 36, 5041–5061 (2017)
Z. Yuan, S. Fan, C. Yuan, L. Geng, A 100 MHz, 0.8-to-1.1 V, 170 mA digital LDO with 8-cycles mean settling time and 9-bit regulating resolution in 180-nm CMOS. IEEE Trans. Circuits Syst II. 67(9), 1664–1668 (2020)
Acknowledgements
This work was supported by the National Natural Science Foundation of China (61804124, 61674122) and the Natural Science Project of Shaanxi Province Education Department (18JK0703).
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Dong, S., Bu, S. & Tong, X. A 0.6–1.8 V/0.4–1.6 V Input/Output LDO with High PSRR over 50 dB/30 dB in Dual-Modes. Circuits Syst Signal Process 42, 84–106 (2023). https://doi.org/10.1007/s00034-022-02147-8
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DOI: https://doi.org/10.1007/s00034-022-02147-8