Abstract
Memristors have been suggested for the use as artificial synapses and have performed well in this role in simulations with artificial spiking neurons. We will show that real world memristors natively spike and describe the properties of these spikes. A network of purely memristors should not show any behaviour in addition to that expected from a single memristor. Networks of 2 and 3 memristor combinations were investigated. We demonstrate that, if the memristors are wired together with opposing polarity, oscillations and bursting spikes emerge. We compare two types of memristors, ‘filamentary’ and standard memristors (which are closer to Chua’s theoretical memristors), and found that standard memristors do not exhibit these rich behaviours if they are wired with the same polarity. We propose that these oscillations and spikes may be similar phenomenon to brainwaves and neural spike trains and suggest that these behaviours can be used to perform brain-like computation.
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References
Chua, L.O.: Memristor—the missing circuit element. IEEE Trans. Circuit Theory 18, 507–519 (1971)
Strukov, D.B., Snider, G.S., Stewart, D.R., Williams, R.S.: The missing memristor found. Nature 453, 80–83 (2008)
Toumazou, C., Prodromakis, T., Chua, L.: Two centuries of memristors. Nat. Mater. 11, 478–481 (2012)
Askinaga, H., Shima, H.: Resistive random access memory (ReRAM) based on metal oxides. Proc. IEEE 98, 2237–2251 (2010)
Wu, J., Mobly, K., McCreery, R.L.: Electronic characteristics of fluorene/TiO\(_2\) molecular heterojunctions. J. Chem. Phys. 126, 024704 (2007)
Erokhin, V., Berzina, T., Camorani, P., Smerieri, A., Vavoulis, D., Feng, J., Fontana, M.P.: Material memristive device circuits with synaptic plasticity: learning and memory. BioNanoSci (2011). https://doi.org/10.1007/s12668-011-0004-7
Linares-Barranco, B., Serrano-Gotarredona, T.: Exploiting memristance in adaptive asynchronous spiking neuromorphic nanotechnology systems. In: 9th IEEE Conference on Nanotechnology, pp. 601–609 (2009)
Zamarreno-Ramos, C., Carmunas, L.A., Pérez-Carrasco, J.A., Masquelier, T., Serrano-Gotarredona, T., Linares-Barranco, B.: On spike-timing dependent plasticity, memristive devices and building a self-learning visual cortex. Front. Neuormorphic Eng. 5, 26(1)–26(20) (2011)
Kosta, S.P., Kosta, Y.P., Bhatele, M., Dubey, Y.M., Gaur, A., Kosta, S., Gupta, J., Patel, A., Patel, B.: Human blood liquid memristor. Int. J. Med. Eng. Inform. 16–29 (2011)
Lütken, C.A., Grimes, S., Martinsen, O.G.: Memristive properties of human sweat ducts. In: World Congress on Medical Physics and Biomedial Engineering, vol. 25/7, pp. 696–698 (2009)
Adamatzky, A., Gale, E., de Lacy Costello, B.: Are slime moulds living memristors? (2013) arXiv, June:1306.3414v1
Chua, L., Sbitnev, V., Kim, H.: Hodgkin-Huxley axon is made of memristors. Int. J. Bifurcat. Chaos 22, 1230011 (48pp) (2012)
Chua, L., Sbitnev, V., Kim, H.: Neurons are poised near the edge of chaos. Int. J. Bifurcat. Chaos 11, 1250098 (49pp) (2012)
Gergel-Hackett, N., Hamadani, B., Dunlap, B., Suehle, J., Ricther, C., Hacker, C., Gundlach, D.: A flexible solution-processed memristor. IEEE Electron Device Lett. 30, 706–708 (2009)
Gale, E., Pearson, D., Kitson, S., Adamatzky, A., de Lacy Costello, B.: Different behaviour seen in flexible Titanium Dioxide sol-gel memristors dependent on the choice of electrode material. In: Technical Digest of Frontiers in Electronic Materials, pp. 577–578. Wiley-VCH, Weinheim, Germany (2012)
Bi, G.-Q., Poo, M.-M.: Spike timing for LTP and LTD in culture. J. Neurosci. 18, 10472–10565 (1998)
Gale, E.: The Memory-Conservation Model of Memristance (Forthcoming)
Gale, E.M., de Lacy Costello, B., Adamatzky, A.: Filamentary extension of the Mem-Con theory of memristance and its application to titanium dioxide Sol-Gel memristors. In: IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA 2012), Kuala Lumpur, Malaysia, November 2012
Troitsky, V.I., Berzina, T.S., Fontana, M.P.: Langmuir–Blodgett assemblies with patterned conductive polyaniline layers. Mater. Sci. Eng. 22, 239 (2002)
Troitsky, V.I., Berzina, T.S., Fontana, M.P.: Deposition of uniform conductive polyaniline films and approach for their patterning. Synth. Met. 129, 39 (2002)
Gale, E., de Lacy Costello, B., Adamatzky, A.: Observation, characterization and modeling of memristor current spikes. Appl. Math. Inf. Sci. 7, 1395–1403 (2013)
Chua, L.O., Kang, S.M.: Memristive devices and systems. Proc. IEEE 64, 209–223 (1976)
Hebb, D.: The Organisation of Behaviour. Wiley, New York (1949)
Masumoto, T.: A chaotic attractor from Chua’s circuit. IEEE Trans. Circuits Syst. CAS–31, 1055–1058 (1984)
Chua, L.: Chua’s circuit: ten years later. IEICE Trans. Fundam. E77–A, 1811–1821 (1994)
Madan, R.N.: Chua’s Circuit: A Paradigm for Chaos. World Scientific, Singapore (1993)
Itoh, M., Chua, L.: Memristor oscillators. Int. J. Bifurcat. Chaos 18, 3183–3206 (2008)
Messias, M., Nespoli, C., Botta, V.A.: Hopf bifurcation from lines of equilibria without parameters in memristor oscillators. Int. J. Bifurcat. Chaos 20, 437–450 (2010)
Bao, B.C., Liu, Z., Xu, J.P.: Steady periodic memristor oscillator with transient chaotic behaviours. Electron. Lett. 46, 237–238 (2010)
Bao, B.-C., Xu, J.-P., Liu, Z.: Initial state dependent dynamical behaviors in a memristor based chaotic circuit. Chin. Phys. Lett. 27, 070504 (2010)
Bo-Cheng, B., Ping, X.J., Guo-Hua, Z., Zheng-Hua, M., Ling, Z.: Chaotic memristive circuit: equivalent circuit realization and dynamical analysis. Chin. Phys. B 20, 120502 (7pp) (2011)
Buscarino, A., Fortuna, L., Frasca, M., Gambuzza, L.V.: A chaotic circuit based on hewlett-packard memristor. Chaos 22, 023136 (2012)
Medeiros-Ribeiro, G., Pickett, M.D., Stanley Williams, R.: A scalable neuristor built with Mott memristors. Nat. Mater. 16, 114–117 (2012)
Muthuswamy, B.: Memristor based circuit chaos. IETE Tech. Rev. 26, 1–15 (2009)
Gale, E., Pearson, D., Kitson, S., Adamatzky, A., de Lacy Costello, B.: Different behaviour seen in flexible titanium dioxide sol-gel memristors dependent on the choice of electrode material. In: Technical Digest of Frontiers in Electronic Materials, pp. 577–578. Nature Conference. Wiley-VCH, June 2012
Gale, E., Pearson, D., Kitson, S., Adamatzky, A., de Lacy Costello, B.: Aluminium electrodes effect the operation of titanium oxide sol-gel memristors (2011). arXiv:1106.6293v1
Erokhin, V., Berzina, T., Fontana, M.P.: Hybrid electronic device based on polyaniline-polyethylenoxide junction. J. Appl. Phys. 97, 064501 (2005)
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Gale, E., de Lacy Costello, B., Adamatzky, A. (2019). Spiking in Memristor Networks. In: Chua, L., Sirakoulis, G., Adamatzky, A. (eds) Handbook of Memristor Networks. Springer, Cham. https://doi.org/10.1007/978-3-319-76375-0_27
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DOI: https://doi.org/10.1007/978-3-319-76375-0_27
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