Abstract
2D modeling results of the electrostatics and the drain current in nanoscale DG MOSFETs are presented. The modeling of the 2D capacitive coupling within the device is based on the conformal mapping technique. In moderate above-threshold conditions, we obtain self-consistent results, which are in excellent agreement with numerical simulations.
Chapter PDF
Similar content being viewed by others
References
Woo, J.S., Terrill, K.W., Vasudev, P.K.: Two-dimensional analytic modeling of very thin SOI MOSFETs. IEEE Trans. Electron Devices 37, 1999–2005 (1990)
Frank, D.J., Taur, Y., Wong, H.-S.P.: Generalized scale length for two-dimensional effects in MOSFETs. IEEE Electron Device Letters 19, 385–387 (1998)
Oh, S.-H., Monroe, D., Hergenrother, J.M.: Analytic Description of Short-Channel Effects in Fully-depleted Double Gate and Cylindrical, Surrounding-Gate MOSFETs. IEEE Electron Device Letters 21(9), 1173–1178 (2000)
Liang, X., Taur, Y.: A 2-D analytical solution for SCEs in the 2D MOSFET. IEEE Trans. Electron Devices 51(8), 1385–1391 (2004)
Iñíguez, B., Hamid, H.A., Jiménez, D., Roig, J.: Compact Model for Multiple Gate MOSFETs. In: Proc. of the Workshop on Compact Modeling, Anaheim, CA, pp. 52–57 (2005)
Weber, E.: Electromagnetic fields, Mapping of Fields, vol. 1. Wiley, New York (1950)
Klös, A., Kostka, A.: A new analytical method of solving 2D Poisson’s equation in MOS devices applied to threshold voltage and subthreshold modeling. Solid-State Electronics 39, 1761–1775 (1996)
Østhaug, J., Fjeldly, T.A., Iniguez, B.: Closed-form 2D modeling of sub-100nm MOSFETs in the subthreshold regime. J. Telecom. and Information Techn. 1, 70–79 (2004)
Kolberg, S., Fjeldly, T.A.: 2D modeling of nanoscale DG SOI MOSFETs in the subthreshold regime. Accepted for publication in Journal of Computational Electronics
Kolberg, S., Fjeldly, T.A.: 2D Modeling of Nanoscale Double Gate SOI MOSFETs Using Conformal Mapping. Physica Scripta, accepted for publication in Physica Scripta
Template device for modeling and simulation defined within the European Commission Network of Excellence project SINANO, http://www.sinano.org/
Fjeldly, T.A., Shur, M.S.: Threshold Voltage Modeling and the Subthreshold Regime of Operation of Short-Channel MOSFETs. IEEE Trans. Electron Devices 40, 137–145 (1993)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2006 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Kolberg, S., Fjeldly, T.A., Iñiguez, B. (2006). Self-consistent 2D Compact Model for Nanoscale Double Gate MOSFETs. In: Alexandrov, V.N., van Albada, G.D., Sloot, P.M.A., Dongarra, J. (eds) Computational Science – ICCS 2006. ICCS 2006. Lecture Notes in Computer Science, vol 3994. Springer, Berlin, Heidelberg. https://doi.org/10.1007/11758549_83
Download citation
DOI: https://doi.org/10.1007/11758549_83
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-34385-1
Online ISBN: 978-3-540-34386-8
eBook Packages: Computer ScienceComputer Science (R0)