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"Gate oxide breakdown in FET devices and circuits: From nanoscale physics ..."

Ben Kaczer et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.01.063

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/KaczerDRG07
Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken:
Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. Microelectron. Reliab. 47(4-5): 559-566 (2007)

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