0.53Ga_0.47As FinFET with gate-to-source/drain underlap for sub-14 nm technology node to impede short channel effect.">0.53Ga_0.47As FinFET with gate-to-source/drain underlap for sub-14 nm technology node to impede short channel effect., dblp, computer science, bibliography, knowledge graph, author, editor, publication, conference, journal, book, thesis, database, collection, open data, bibtex">

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"Assessment of interface traps in In0.53Ga0.47As ..."

Jay Pathak, Anand D. Darji (2019)

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DOI: 10.1049/IET-CDS.2018.5319

access: closed

type: Journal Article

metadata version: 2020-12-31

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Jay Pathak, Anand D. Darji:
Assessment of interface traps in In_0.53Ga_0.47As FinFET with gate-to-source/drain underlap for sub-14 nm technology node to impede short channel effect. IET Circuits Devices Syst. 13(4): 428-434 (2019)

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