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Bingxu Ning
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2020 – today
- 2022
- [j10]Chang Cai, Bingxu Ning, Xue Fan, Tianqi Liu, Lingyun Ke, Gengsheng Chen, Jian Yu, Ze He, Liewei Xu, Jie Liu:
SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs. Sci. China Inf. Sci. 65(2) (2022) - 2021
- [c2]Shuai Gao, Chang Cai
, Bingxu Ning, Ze He, Jie Liu:
Characterization and Classification of Heavy Ion Induced Failures in FPGA-based Logical Circuits. ASICON 2021: 1-4 - 2020
- [c1]Chang Cai
Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 nm FDSOI SRAMs. IRPS 2020: 1-5
2010 – 2019
- 2016
- [j9]Shuang Fan, Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi, Chao Peng
Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs. Microelectron. Reliab. 56: 1-9 (2016) - 2014
- [j8]Chao Peng
Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation. Microelectron. Reliab. 54(4): 730-737 (2014) - 2013
- [j7]Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Ming Chen, Shichang Zou:
Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs. Microelectron. J. 44(2): 86-93 (2013) - [j6]Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen, Shichang Zou:
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs. Microelectron. Reliab. 53(2): 259-264 (2013) - 2012
- [j5]Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou:
Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. Microelectron. Reliab. 52(1): 130-136 (2012) - 2011
- [j4]Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou:
Impact of within-wafer process variability on radiation response. Microelectron. J. 42(6): 883-888 (2011) - [j3]Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Zhangli Liu, Ming Chen, Dawei Bi, Shichang Zou:
The impact of total ionizing radiation on body effect. Microelectron. J. 42(12): 1396-1399 (2011) - [j2]Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou:
Comparison of TID response in core, input/output and high voltage transistors for flash memory. Microelectron. Reliab. 51(6): 1148-1151 (2011) - [j1]Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou:
Total ionizing dose effects in elementary devices for 180-nm flash technologies. Microelectron. Reliab. 51(8): 1295-1301 (2011)
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