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Seonyong Cha
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2020 – today
- 2024
- [c11]Jihun Kim, Sangsu Park, Hongju Suh, Youngjae Kwon, Seonghun Lee, Yubin Lee, Kayoung Kim, Eungu Han, Jongil Kim, Kyu Sung Kim, Hyejung Choi, Seungwook Ryu, Su Jin Chae, Seho Lee, Soo Gil Kim, Jaeyun Yi, Seonyong Cha:
Realistic Noise-aware Training as a Component of the Holistic ACiM Development Platform. IMW 2024: 1-4 - [c10]Won-Tae Koo, Jae-Gil Lee, Gunhee Lee, Woocheol Lee, Jungwook Woo, Dong Ik Suh, Joongsik Kim, Hyung Dong Lee, Seho Lee, Jaeyun Yi, Seonyong Cha:
Modeling and Demonstration for Multi-level Weight Conductance in Computational FeFET Memory Cell. IMW 2024: 1-4 - [c9]Youngjae Kwon, Won-Tae Koo, Sangsu Park, Dong Ik Suh, Gunhee Lee, Hyung Dong Lee, Youngbae Ahn, Dohee Kim, Seungwook Ryu, Hoseok Em, Seokjoon Kang, Chang Won Jeong, Junho Cheon, Hyejung Choi, Soo Gil Kim, Seho Lee, Jaeyun Yi, Seonyong Cha:
Improvement of MAC Accuracy using Oxygen Diffusion Barriers in Resistive Synaptic Cell Arrays. IMW 2024: 1-4 - [c8]Myoungsub Kim, Yooncheol Bae, Jaehyuk Park, Jeongho Yeon, Hyungjoon Shim, Sehyun Jin, Hyunsoo Kim, Sangchul Oh, Gapsok Do, Dongyeol Yun, Hyung Dong Lee, David Ahn, Junghun Lee, Muhui Park, Junghyuk Yoon, Jeongho Yi, Taekseung Kim, Gain Park, Seoungju Chung, Junho Cheon, Sujin Chae, Namkyun Park, Kyunghoon Kim, Dongyean Oh, Jaeyun Yi, Seonyong Cha:
First Demonstration of Fully Integrated 16 nm Half-Pitch Selector Only Memory (SOM) for Emerging CXL Memory. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c7]Bvunarvul Kim, Seungpil Lee, Beomseok Hah, Kanawoo Park, Yongsoon Park, Kangwook Jo, Yujong Noh, Hyeon-Cheon Seol, Hyunsoo Lee, Jae-Hyeon Shin, Seongjin Choi, Youngdon Jung, Sungho Ahn, Yonghun Park, Sujeong Oh, Myungsu Kim, Seonauk Kim, Hyunwook Park, Taeho Lee, Haeun Won, Minsung Kim, Cheulhee Koo, Yeonjoo Choi, Suyoung Choi, Sechun Park, Dongkyu Youn, Junyoun Lim, Wonsun Park, Hwang Hur, Kichang Kwean, Hongsok Choi, Woopyo Jeong, Sungyong Chung, Jungdal Choi, Seonyong Cha:
A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $\mathsf{i}$. ISSCC 2023: 402-403 - [c6]Whayoung Kim, Jaehyeon Kim, Dongjin Ko, Jun-Hwe Cha, Gyeongcheol Park, Youngbae Ahn, Jong-Young Lee, Minchul Sung, Hyejung Choi, Seung Wook Ryu, Seiyon Kim, Myung-Hee Na, Seonyong Cha:
Demonstration of crystalline IGZO transistor with high thermal stability for memory applications. VLSI Technology and Circuits 2023: 1-2 - [c5]Jaeyun Yi, Myoungsub Kim, Jungwon Seo, Namkyun Park, Seungyun Lee, Jongil Kim, Gapsok Do, Hongjin Jang, Hyochol Koo, Sunglae Cho, Sujin Chae, Taehoon Kim, Myung-Hee Na, Seonyong Cha:
The chalcogenide-based memory technology continues: beyond 20nm 4-deck 256Gb cross-point memory. VLSI Technology and Circuits 2023: 1-2 - [c4]Sunghyun Yoon, Sung-In Hong, Daehyun Kim, Garam Choi, Young Mo Kim, Kyunghoon Min, Seiyon Kim, Myung-Hee Na, Seonyong Cha:
QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c3]Jae-Gil Lee, Joongsik Kim, Dong Ik Suh, Ildo Kim, Gwon Deok Han, Seung Wook Ryu, Seho Lee, Myung-Hee Na, Seonyong Cha, Hyeon Woo Park, Cheol Seong Hwang:
Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges. IMW 2022: 1-4 - [c2]Sangsu Park, Gyonhui Lee, Youngjae Kwon, Dong Ik Suh, Hanwool Lee, Sangeun Je, Dabin Kim, Dohan Lee, Seungwook Ryu, Seungbum Kim, Euiseok Kim, Sunghoon Lee, Kyoung Park, Seho Lee, Myung-Hee Na, Seonyong Cha:
Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-Memory. IMW 2022: 1-3 - [c1]Daeyong Shim, Chunseok Jeong, Euncheol Lee, Junmo Kang, Seokcheol Yoon, Yongkee Kwon, Il Park, Hyun Ahn, Seonyong Cha, Jinkook Kim:
Holistic approaches to memory solutions for the Autonomous Driving Era. ISCAS 2022: 351-355
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