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Patrick Leduc
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2010 – 2019
- 2013
- [j2]Thomas Frank, Stéphane Moreau
, Cédrick Chappaz, Patrick Leduc, Lucile Arnaud, Aurélie Thuaire
Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric. Microelectron. Reliab. 53(1): 17-29 (2013) - [c7]Melanie Brocard, Cédric Bermond, Thierry Lacrevaz, Alexis Farcy, Patrick Le Maitre, P. Scheer, Patrick Leduc, Séverine Cheramy, Bernard Fléchet:
RF characterization of substrate coupling between TSV and MOS transistors in 3D integrated circuits. 3DIC 2013: 1-8 - [c6]Yann Lamy, Jean-Philippe Colonna, G. Simon, Patrick Leduc, Séverine Cheramy, C. Laviron:
Which interconnects for which 3D applications? Status and perspectives. 3DIC 2013: 1-6 - [c5]Marco Casale-Rossi, Patrick Leduc, Giovanni De Micheli, Patrick Blouet, Brendan Farley, Anna Fontanelli, Dragomir Milojevic, Steve Smith:
Panel: "will 3D-IC remain a technology of the future... even in the future?". DATE 2013: 1526-1530 - 2010
- [c4]Rebha El Farhane, Myriam Assous, Patrick Leduc, Aurélie Thuaire
A successful implementation of dual damascene architecture to copper TSV for 3D high density applications. 3DIC 2010: 1-4
2000 – 2009
- 2009
- [j1]Gilles Poupon, Nicolas Sillon, David Henry, Charlotte Gillot, Alan Mathewson
System on Wafer: A New Silicon Concept in SiP. Proc. IEEE 97(1): 60-69 (2009) - [c3]Lionel Cadix, Alexis Farcy, Cédric Bermond, Christine Fuchs, Patrick Leduc, Maxime Rousseau, Myriam Assous, Alexandre Valentian, Julie Roullard, Elie Eid, Nicolas Sillon, Bernard Fléchet, Pascal Ancey:
Modelling of Through Silicon Via RF performance and impact on signal transmission in 3D integrated circuits. 3DIC 2009: 1-7 - [c2]Léa Di Cioccio, Pierric Gueguen, Rachid Taibi, Thomas Signamarcheix, Laurent Bally, Laurent Vandroux, Marc Zussy, Sophie Verrun, Jérôme Dechamp, Patrick Leduc, Myriam Assous, David Bouchu, François de Crecy, Laurent-Luc Chapelon, Laurent Clavelier:
An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling. 3DIC 2009: 1-4 - [c1]Patrick Leduc, Myriam Assous, Léa Di Cioccio, Marc Zussy, Thomas Signamarcheix, Antonio Roman, Maxime Rousseau, Sophie Verrun, Laurent Bally, David Bouchu, Lionel Cadix, Alexis Farcy, Nicolas Sillon:
First integration of Cu TSV using die-to-wafer direct bonding and planarization. 3DIC 2009: 1-5
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