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Xiaolin Wang 0007
Person information
- affiliation: National University of Singapore, Singapore
Other persons with the same name
- Xiaolin Wang (aka: Xiao-Lin Wang, Xiao-lin Wang) — disambiguation page
- Xiaolin Wang 0001 — Peking University, Beijing, China
- Xiaolin Wang 0002 — National Institute of Information and Communications Technology, Japan
- Xiaolin Wang 0003 — Shandong University, Jinan, China
- Xiaolin Wang 0004 — Guangdong University of Technology, Guangzhou, China
- Xiao-Lin Wang 0005 (aka: Xiaolin Wang 0005) — Sichuan University, Chengdu, China
- Xiaolin Wang 0006 — Xidian University, Xi'an, China
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2020 – today
- 2024
- [c10]Jianze Wang, Wei Zhang, Zhen Wu, Yimin Wang, Leming Jiao, Xiaolin Wang, Xiao Gong, Xuanyao Fong:
Transposable Memory Based on the Ferroelectric Field-Effect Transistor. ISCAS 2024: 1-5 - [c9]Gan Liu, Qiwen Kong, Zuopu Zhou, X. Ying, Chen Sun, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Yang Feng, Wei Shi, Bich-Yen Nguyen, N. Kai, Gengchiau Liang, Xiao Gong:
Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor Transistors. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c8]Zijie Zheng, Jiawei Xie, Yiyuan Sun, Ying Xu, Xiaolin Wang, Leming Jiao, Zuopu Zhou, Qiwen Kong, Yue Chen, Xiao Gong:
First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory. ICICDT 2023: 29-33 - [c7]Leming Jiao, Kaizhen Han, Zuopu Zhou, Zijie Zheng, Xiaolin Wang, Qiwen Kong, Yuye Kang, Jishen Zhang, Long Liu, Xiao Gong:
First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices. VLSI Technology and Circuits 2023: 1-2 - [c6]Xiaolin Wang, Zijie Zheng, Qiwen Kong, Leming Jiao, Kaizhen Han, Chen Sun, Zuopu Zhou, Long Liu, Yuye Kang, Gan Liu, Dong Zhang, Xiao Gong:
First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×109 Endurance, and 58.3% Area Saving. VLSI Technology and Circuits 2023: 1-2 - [c5]Dong Zhang, Jixuan Wu, Qiwen Kong, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Zijie Zheng, Yuye Kang, Jiezhi Chen, Xiao Gong:
Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding. VLSI Technology and Circuits 2023: 1-2 - [c4]Zijie Zheng, Leming Jiao, Zuopu Zhou, Yuxuan Wang, Long Liu, Kaizhen Han, Chen Sun, Qiwen Kong, Dong Zhang, Xiaolin Wang, Kai Ni, Xiao Gong:
First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs. VLSI Technology and Circuits 2023: 1-2 - [c3]Zuopu Zhou, Leming Jiao, Zijie Zheng, Xiaolin Wang, Dong Zhang, Kai Ni, Xiao Gong:
First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c2]Leming Jiao, Zuopu Zhou, Zijie Zheng, Yuye Kang, Chen Sun, Qiwen Kong, Xiaolin Wang, Dong Zhang, Gan Liu, Long Liu, Xiao Gong:
BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application. ICICDT 2022: 5-7 - [c1]Zijie Zheng, Chen Sun, Leming Jiao, Dong Zhang, Zuopu Zhou, Xiaolin Wang, Gan Liu, Qiwen Kong, Yue Chen, Kai Ni, Xiao Gong:
Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection. VLSI Technology and Circuits 2022: 389-390
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