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Francisco Jimenez-Molinos
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2020 – today
- 2024
- [i3]M. Carmen Aguilera-Morillo, Ana M. Aguilera, Francisco Jiménez-Molinos, Juan Bautista Roldán:
Stochastic modeling of Random Access Memories reset transitions. CoRR abs/2402.05209 (2024) - 2023
- [j8]Juan Bautista Roldán
, Enrique Miranda
Variability in Resistive Memories. Adv. Intell. Syst. 5(6) (2023) - [i2]Pablo Alex Lázaro, Ignacio Jiménez Gallo, Juan Roldán Aranda, Alberto A. Del Barrio García, Guillermo Botella Juan, Francisco Jiménez-Molinos:
Design and simulation of memristor-based neural networks. CoRR abs/2306.11678 (2023) - 2022
- [c9]David Maldonado
An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance. DCIS 2022: 1-6 - [c8]Germán Vaquero, Francisco Jiménez-Molinos, Juan Bautista Roldán:
Hardware implementation of self-organizing maps using memristors, a simulation study. DCIS 2022: 1-6 - 2021
- [j7]Ana M. Aguilera
Homogeneity problem for basis expansion of functional data with applications to resistive memories. Math. Comput. Simul. 186: 41-51 (2021) - [c7]Juan Bautista Roldán, David Maldonado, Francisco J. Alonso, Andrés M. Roldán, Fei Hui, Yuanyuan Shi, Francisco Jiménez-Molinos, Ana M. Aguilera
Time series modeling of the cycle-to-cycle variability in h-BN based memristors. IRPS 2021: 1-5 - 2020
- [c6]Gerardo González-Cordero
A physically based SPICE model for RRAMs including RTN. DCIS 2020: 1-6 - [c5]Antonio J. Pérez-Ávila
Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation. DCIS 2020: 1-6 - [c4]Mireia Bargallo González
Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors. IRPS 2020: 1-4 - [c3]David Maldonado
Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks. IRPS 2020: 1-5 - [c2]Juan Bautista Roldán, David Maldonado
Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages. IRPS 2020: 1-5
2010 – 2019
- 2019
- [j6]Christian Acal
Phase-type distributions for studying variability in resistive memories. J. Comput. Appl. Math. 345: 23-32 (2019) - [j5]Domingo Barrera
A spline quasi-interpolation based method to obtain the reset voltage in Resistive RAMs in the charge-flux domain. J. Comput. Appl. Math. 354: 326-333 (2019) - [j4]M. Carmen Aguilera-Morillo, Ana M. Aguilera
Stochastic modeling of Random Access Memories reset transitions. Math. Comput. Simul. 159: 197-209 (2019) - [j3]María J. Ibáñez
Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials. Math. Comput. Simul. 164: 120-130 (2019) - 2018
- [j2]Mohamad Moner Al Chawa
Exploring resistive switching-based memristors in the charge-flux domain: A modeling approach. Int. J. Circuit Theory Appl. 46(1): 29-38 (2018) - 2017
- [c1]Ana M. Aguilera, M. C. Aguilera-Morillo, Francisco Jiménez-Molinos, Juan Bautista Roldán:
Modelling Resistive Random Access Memories by means of Functional Principal Component Analysis. MDA 2017: 64-73 - [i1]Rodrigo Picos, Juan Bautista Roldán, Mohamad Moner Al Chawa, Pedro García Fernández, Francisco Jimenez-Molinos, Eugeni García-Moreno:
Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors. CoRR abs/1702.01533 (2017)
2000 – 2009
- 2003
- [j1]Andreas Gehring, Francisco Jimenez-Molinos, Hans Kosina, A. Palma, F. Gámiz, Siegfried Selberherr
Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices. Microelectron. Reliab. 43(9-11): 1495-1500 (2003)
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