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Mohamed Elzeftawi
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2020 – today
- 2022
- [c6]Aida Varzaghani, Bardia Bozorgzadeh, Jack Lam, Ankush Goel, Xiaobin Yuan, Mohamed Elzeftawi, Mehran Izad, Sudipta Sarkar, Alberto Baldisserotto, Seong-Ryong Ryu, Steven Mikes, Jeffrey Hwang
, Varun Joshi, Shahrzad Naraghi, Darshan Kadia, Mohammad Ranjbar, Paul Lee, Dimitri Loizos, Sotirios Zogopoulos, Shwetabh Verma, Stefanos Sidiropoulos:
A 1-to-112Gb/s DSP-Based Wireline Transceiver with a Flexible Clocking Scheme in 5nm FinFET. VLSI Technology and Circuits 2022: 26-27
2010 – 2019
- 2019
- [c5]Anup P. Jose, Valentin Abramzon, Mohamed Elzeftawi, Michael Wang, Kyunglok Kim, Younghoon Song, Shiva Moballegh, Jalil Kamali, Amir Amirkhany:
A 1.5pJ/bit, 5-to-10Gbps Forwarded-Clock I/O with Per-Lane Clock De-Skew in a Low Power 28nm CMOS Process. CICC 2019: 1-4 - 2017
- [j2]Yohan Frans
A 56-Gb/s PAM4 Wireline Transceiver Using a 32-Way Time-Interleaved SAR ADC in 16-nm FinFET. IEEE J. Solid State Circuits 52(4): 1101-1110 (2017) - 2016
- [j1]Yohan Frans
A 40-to-64 Gb/s NRZ Transmitter With Supply-Regulated Front-End in 16 nm FinFET. IEEE J. Solid State Circuits 51(12): 3167-3177 (2016) - [c4]Yohan Frans, Scott McLeod, Hiva Hedayati, Mohamed Elzeftawi, Jin Namkoong, Winson Lin, Jay Im, Parag Upadhyaya, Ken Chang:
3.7 A 40-to-64Gb/s NRZ transmitter with supply-regulated front-end in 16nm FinFET. ISSCC 2016: 68-70 - [c3]Ahmed Elkholy, Ahmed Elmallah, Mohamed Elzeftawi, Ken Chang, Pavan Kumar Hanumolu:
10.6 A 6.75-to-8.25GHz, 250fsrms-integrated-jitter 3.25mW rapid on/off PVT-insensitive fractional-N injection-locked clock multiplier in 65nm CMOS. ISSCC 2016: 192-193 - [c2]Yohan Frans, Mohamed Elzeftawi, Hiva Hedayati, Jay Im, Vassili Kireev, Toan Pham, Jaewook Shin, Parag Upadhyaya, Lei Zhou, Santiago Asuncion, Chris Borrelli, Geoff Zhang, Hongtao Zhang, Ken Chang:
A 56Gb/s PAM4 wireline transceiver using a 32-way time-interleaved SAR ADC in 16nm FinFET. VLSI Circuits 2016: 1-2 - 2012
- [c1]Mohamed Elzeftawi, Samuel Beach, Le Wang, Luke Theogarajan:
A 1.3µW 0.0075mm2 neural amplifier and capacitor-integrated electrodes for high density neural implant recording. BioCAS 2012: 236-239
Coauthor Index
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