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Wataru Uesugi
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2010 – 2019
- 2017
- [j2]Tatsuya Onuki, Wataru Uesugi, Atsuo Isobe, Yoshinori Ando, Satoru Okamoto, Kiyoshi Kato, Tri Rung Yew, J. Y. Wu, Chi Chang Shuai, Shao Hui Wu, James Myers, Klaus Doppler, Masahiro Fujita, Shunpei Yamazaki:
Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide FET Integrated With 65-nm Si CMOS. IEEE J. Solid State Circuits 52(4): 925-932 (2017) - 2016
- [c3]Tatsuya Onuki, Wataru Uesugi, Hikaru Tamura, Atsuo Isobe, Yoshinori Ando, Satoru Okamoto, Kiyoshi Kato, Tri Rung Yew, Chen Bin Lin, J. Y. Wu, Chi Chang Shuai, Shao Hui Wu, James Myers, Klaus Doppler, Masahiro Fujita, Shunpei Yamazaki:
Embedded memory and ARM Cortex-M0 core using 60-nm C-axis aligned crystalline indium-gallium-zinc oxide FET integrated with 65-nm Si CMOS. VLSI Circuits 2016: 1-2 - 2014
- [j1]Hikaru Tamura, Kiyoshi Kato, Takahiko Ishizu, Wataru Uesugi, Atsuo Isobe, Naoaki Tsutsui, Yasutaka Suzuki, Yutaka Okazaki, Yukio Maehashi, Jun Koyama, Yoshitaka Yamamoto, Shunpei Yamazaki, Masahiro Fujita, James Myers, Pekka Korpinen:
Embedded SRAM and Cortex-M0 Core Using a 60-nm Crystalline Oxide Semiconductor. IEEE Micro 34(6): 42-53 (2014) - [c2]Hikaru Tamura, Kiyoshi Kato, Takahiko Ishizu, Tatsuya Onuki, Wataru Uesugi, Takuro Ohmaru, Kazuaki Ohshima, Hidetomo Kobayashi, Seiichi Yoneda, Atsuo Isobe, Naoaki Tsutsui, Suguru Hondo, Yasutaka Suzuki, Yutaka Okazaki, Tomoaki Atsumi, Yutaka Shionoiri, Yukio Maehashi, Gensuke Goto, Masahiro Fujita, James Myers, Pekka Korpinen, Jun Koyama, Yoshitaka Yamamoto, Shunpei Yamazaki:
Embedded SRAM and Cortex-M0 core with backup circuits using a 60-nm crystalline oxide semiconductor for power gating. COOL Chips 2014: 1-3 - [c1]Atsuo Isobe, Hikaru Tamura, Kiyoshi Kato, Takuro Ohmaru, Wataru Uesugi, Takahiko Ishizu, Tatsuya Onuki, Kazuaki Ohshima, Takanori Matsuzaki, Atsushi Hirose, Yasutaka Suzuki, Naoaki Tsutsui, Tomoaki Atsumi, Yutaka Shionoiri, Gensuke Goto, Jun Koyama, Masahiro Fujita, Shunpei Yamazaki:
A 32-bit CPU with zero standby power and 1.5-clock sleep/2.5-clock wake-up achieved by utilizing a 180-nm C-axis aligned crystalline In-Ga-Zn oxide transistor. VLSIC 2014: 1-2
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