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Maximilian Dammann
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2020 – today
- 2021
- [c2]Maximilian Dammann, Martina Baeumler, Tobias Kemmer, Helmer Konstanzer, Peter Brückner, Sebastian Krause
, Andreas Graff, Michél Simon-Najasek:
Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress. IRPS 2021: 1-7
2010 – 2019
- 2018
- [j12]Maximilian Dammann, Martina Baeumler, Peter Brückner
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectron. Reliab. 88-90: 385-388 (2018) - 2017
- [j11]Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. Microelectron. Reliab. 76-77: 292-297 (2017) - [j10]Andreas Zibold
Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects. Microelectron. Reliab. 76-77: 566-570 (2017) - 2015
- [j9]Maximilian Dammann, Martina Baeumler, Peter Brückner
Degradation of 0.25 μm GaN HEMTs under high temperature stress test. Microelectron. Reliab. 55(9-10): 1667-1671 (2015) - [c1]Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs. IRPS 2015: 2 - 2014
- [j8]Christoph Gerhard
Sequential Atmospheric Pressure Plasma-Assisted Laser Ablation of Photovoltaic Cover Glass for Improved Contour Accuracy. Micromachines 5(3): 408-419 (2014) - [j7]Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. Microelectron. Reliab. 54(12): 2656-2661 (2014) - 2013
- [j6]P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann:
Qualification of 50 V GaN on SiC technology for RF power amplifiers. Microelectron. Reliab. 53(9-11): 1439-1443 (2013) - 2011
- [j5]M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. Microelectron. Reliab. 51(2): 224-228 (2011)
2000 – 2009
- 2009
- [j4]Maximilian Dammann, W. Pletschen, Patrick Waltereit
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectron. Reliab. 49(5): 474-477 (2009) - 2004
- [j3]Maximilian Dammann, Arnulf Leuther, Rüdiger Quay
Reliability of 70 nm metamorphic HEMTs. Microelectron. Reliab. 44(6): 939-943 (2004) - 2002
- [j2]Maximilian Dammann, F. Benkhelifa, M. Meng, W. Jantz:
Reliability of Metamorphic HEMTs for Power Applications. Microelectron. Reliab. 42(9-11): 1569-1573 (2002) - [j1]Paolo Cova
High-field step-stress and long term stability of PHEMTs with different gate and recess lengths. Microelectron. Reliab. 42(9-11): 1587-1592 (2002)
Coauthor Index
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