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HongLiang Lv
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2020 – today
- 2024
- [j9]Dongyu Zhang, Hongliang Lv
, Silu Yan, Yang Hu, Qijun Zhang, Chao Han, Ranran Zhao, Yuming Zhang:
Multi-objective neural network modeling and applications to microwave power amplifiers. Microelectron. J. 149: 106244 (2024) - 2022
- [j8]Ranran Zhao, Yuming Zhang, Hongliang Lv, Yue Wu:
Design and Implementation of Charge Pump Phase-Locked Loop Frequency Source Based on GaAs pHEMT Process. Sensors 22(2): 504 (2022) - 2021
- [c2]Yi Zhu, Hongliang Lv, Yuming Zhang, Yimen Zhang, Zhijun Lyu, Jiale Sun:
Characteristics of A Novel Quaternary Tunneling Field-Effect Transistor for Low Power Applicaitons. ICTA 2021: 47-48 - 2020
- [j7]Shizheng Yang
A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter. IEEE Access 8: 23559-23567 (2020)
2010 – 2019
- 2019
- [j6]Jing Zhang, Hongliang Lv, Yifeng Song, Haiqiao Ni, Zhichuan Niu, Yuming Zhang:
The Study on Fabrication and Characterization of Al0.2In0.8Sb/InAs0.4Sb0.6 Heterostructures by Molecular Beam Epitaxy. IEEE Access 7: 102710-102716 (2019) - [c1]Shixing Qiao, Hongliang Lv, Yuming Zhang, Yimen Zhang, Peng Ding:
An Improved InP HEMT Small Signal Model with RC Network. ASICON 2019: 1-4 - 2018
- [j5]Shaojun Li, HongLiang Lv, Yimen Zhang, Yuming Zhang, Yansong Zhang, Muhammad Asif:
A broadband high efficiency monolithic power amplifier with GaAs HBT. IEICE Electron. Express 15(10): 20180245 (2018) - [j4]Shaojun Li, HongLiang Lv, Yimen Zhang, Yuming Zhang, Yue Wu, Muhammad Asif:
A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology. IEICE Electron. Express 15(23): 20180946 (2018) - [j3]Yue Wu, HongLiang Lv
Analysis and Design of a Broadband Frequency Divider Using Modified Active Loads in GaAs HBT. J. Circuits Syst. Comput. 27(3): 1850039:1-1850039:13 (2018) - 2012
- [j2]Jincan Zhang, Yuming Zhang, HongLiang Lv, Yimen Zhang, Shi Yang:
The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors. Microelectron. Reliab. 52(12): 2941-2947 (2012)
2000 – 2009
- 2008
- [j1]QuanJun Cao, Yimen Zhang, Yuming Zhang, HongLiang Lv, YueHu Wang, XiaoYan Tang, Hui Guo:
Improved empirical DC I-V model for 4H-SiC MESFETs. Sci. China Ser. F Inf. Sci. 51(8): 1184-1192 (2008)
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