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"Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and ..."

S. Subhechha et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830448

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-29

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S. Subhechha, Nouredine Rassoul, Attilio Belmonte, Hubert Hody, Harold Dekkers, Michiel J. van Setten, Adrian Vaisman Chasin, Shamin H. Sharifi, S. Sutar, L. Magnarin, Umberto Celano, H. Puliyalil, Shreya Kundu, M. Pak, Lieve Teugels, D. Tsvetanova, Nina Bazzazian, Kevin Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar:
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm. VLSI Technology and Circuits 2022: 292-293

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