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"Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility ..."

Marco Saro et al. (2024)

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DOI: 10.1109/IRPS48228.2024.10529479

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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  - conf/irps/SaroPCFRSMMZBGKM24
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  - https://dblp.org/rec/conf/irps/SaroPCFRSMMZBGKM24
Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra:
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. IRPS 2024: 5

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