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"Probing defects generation during stress in high-κ/metal gate FinFETs ..."

Francesco Maria Puglisi et al. (2016)

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DOI: 10.1109/ESSDERC.2016.7599633

access: closed

type: Conference or Workshop Paper

metadata version: 2022-12-07

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  - conf/essderc/PuglisiCKLP16
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Francesco Maria Puglisi, Felipe Costantini, Ben Kaczer, Luca Larcher, Paolo Pavan:
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization. ESSDERC 2016: 252-255

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