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"Improvement of reverse recovery characteristics through integration of ..."
Kang Zhang et al. (2023)
- Kang Zhang, Yu Wu, Dongqing Hu, Yunpeng Jia, Xintian Zhou:
Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure. EITCE 2023: 1601-1608
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