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Daniela Munteanu
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2010 – 2019
- 2017
- [j11]Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu
, Gilles Gasiot, Philippe Roche:
Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs. Microelectron. Reliab. 76-77: 53-57 (2017) - [j10]Daniela Munteanu, Jean-Luc Autran, Soilihi Moindjie:
Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation. Microelectron. Reliab. 76-77: 719-724 (2017) - 2016
- [j9]Tarek Saad Saoud, Soilihi Moindjie, Daniela Munteanu
Natural radiation events in CCD imagers at ground level. Microelectron. Reliab. 64: 68-72 (2016) - 2015
- [j8]Daniela Munteanu
SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation. Microelectron. Reliab. 55(9-10): 1501-1505 (2015) - [j7]Jean-Luc Autran, Daniela Munteanu
ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure. Microelectron. Reliab. 55(9-10): 1506-1511 (2015) - [j6]Daniela Munteanu
3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs. Microelectron. Reliab. 55(9-10): 1522-1526 (2015) - [j5]Jean-Luc Autran, Daniela Munteanu
Radiation and COTS at ground level. Microelectron. Reliab. 55(9-10): 2147-2153 (2015) - 2014
- [j4]Jean-Luc Autran, Daniela Munteanu
Real-time soft-error rate measurements: A review. Microelectron. Reliab. 54(8): 1455-1476 (2014) - [j3]Jean-Luc Autran, Maximilien Glorieux, Daniela Munteanu
Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits. Microelectron. Reliab. 54(9-10): 2278-2283 (2014) - [j2]Daniela Munteanu
Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation. Microelectron. Reliab. 54(9-10): 2284-2288 (2014) - 2010
- [j1]Jean-Luc Autran, Daniela Munteanu
Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level. Microelectron. Reliab. 50(9-11): 1822-1831 (2010)
Coauthor Index
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