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"SRAM Write-Ability Improvement With Transient Negative Bit-Line Voltage."

Saibal Mukhopadhyay et al. (2011)

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DOI: 10.1109/TVLSI.2009.2029114

access: closed

type: Journal Article

metadata version: 2020-03-11

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  - https://dblp.org/rec/journals/tvlsi/MukhopadhyayRKC11
Saibal Mukhopadhyay, Rahul M. Rao, Jae-Joon Kim, Ching-Te Chuang:
SRAM Write-Ability Improvement With Transient Negative Bit-Line Voltage. IEEE Trans. Very Large Scale Integr. Syst. 19(1): 24-32 (2011)

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