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"High Restore Yield NVSRAM Structures With Dual Complementary RRAM Devices ..."

Zhiting Lin et al. (2023)

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DOI: 10.1109/TVLSI.2023.3242300

access: closed

type: Journal Article

metadata version: 2023-05-03

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  - https://dblp.org/rec/journals/tvlsi/LinCSWZLP23
Zhiting Lin, Min Chen, Peng Sun, Xiulong Wu, Qiang Zhao, Wenjuan Lu, Chunyu Peng:
High Restore Yield NVSRAM Structures With Dual Complementary RRAM Devices for High-Speed Applications. IEEE Trans. Very Large Scale Integr. Syst. 31(4): 522-531 (2023)

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