BD) of TiN/HfO₂ n-channel MOS devices in inversion.">BD) of TiN/HfO₂ n-channel MOS devices in inversion., dblp, computer science, bibliography, knowledge graph, author, editor, publication, conference, journal, book, thesis, database, collection, open data, bibtex">

default search action

combined dblp search
author search
venue search
publication search

ask others

"Temperature dependent time-to-breakdown (TBD) of ..."

N. A. Chowdhury et al. (2009)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2009.02.003

access: closed

type: Journal Article

metadata version: 2021-10-14

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/ChowdhuryWBYRM09
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/ChowdhuryWBYRM09
N. A. Chowdhury, X. Wang, Gennadi Bersuker, Chadwin D. Young, N. Rahim, Durga Misra:
Temperature dependent time-to-breakdown (T_BD) of TiN/HfO₂ n-channel MOS devices in inversion. Microelectron. Reliab. 49(5): 495-498 (2009)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.