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"SiC trench MOSFET with integrated side-wall Schottky barrier diode having ..."

Bo Yi et al. (2019)

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DOI: 10.1587/ELEX.16.20181135

access: open

type: Journal Article

metadata version: 2021-02-12

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  - https://dblp.org/rec/journals/ieiceee/YiHLCHK19
Bo Yi, Hao Hu, Jia Lin, Junji Cheng, Haimeng Huang, MouFu Kong:
SiC trench MOSFET with integrated side-wall Schottky barrier diode having P⁺ electric field shield. IEICE Electron. Express 16(5): 20181135 (2019)

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