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"Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers."

Masaru Sato et al. (2017)

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DOI: 10.1587/TRANSELE.E100.C.417

access: closed

type: Journal Article

metadata version: 2022-03-02

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  dblp key:
  - journals/ieicet/SatoNSNKIHJ17
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  persistent URL:
  - https://dblp.org/rec/journals/ieicet/SatoNSNKIHJ17
Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin:
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. IEICE Trans. Electron. 100-C(5): 417-423 (2017)

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