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"A detailed analysis and electrical modeling of gate oxide shorts in MOS ..."

Jaume Segura et al. (1996)

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DOI: 10.1007/BF00133386

access: closed

type: Journal Article

metadata version: 2023-07-06

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Jaume Segura, Carol de Benito, Antonio Rubio, Charles F. Hawkins:
A detailed analysis and electrical modeling of gate oxide shorts in MOS transistors. J. Electron. Test. 8(3): 229-239 (1996)

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