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"Total Ionizing Dose Effect and Single Event Burnout of VDMOS with ..."

Jiongjiong Mo et al. (2017)

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DOI: 10.1007/S10836-017-5647-Z

access: closed

type: Journal Article

metadata version: 2020-09-11

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  - https://dblp.org/rec/journals/et/MoCWY17
Jiongjiong Mo, Hua Chen, Liping Wang, Fa-Xin Yu:
Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation. J. Electron. Test. 33(2): 255-259 (2017)

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