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"A Circuit-Level Analytical Study on Switching Behaviors of SiC Diode at ..."

Carl N. M. Ho et al. (2008)

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DOI: 10.1109/08IAS.2008.367

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-21

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  dblp key:
  - conf/iasam/HoCCL08
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  - https://dblp.org/rec/conf/iasam/HoCCL08
Carl N. M. Ho, Francisco Canales, Antonio Coccia, Matti Laitinen:
A Circuit-Level Analytical Study on Switching Behaviors of SiC Diode at Basic Cell for Power Converters. IAS 2008: 1-8

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