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Jiezhi Chen
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2020 – today
- 2024
- [c16]Yang Feng, Dong Zhang, Chen Sun, Zijie Zheng, Yue Chen, Qiwen Kong, Gan Liu, Yuye Kang, Kaizhen Han, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong:
First Demonstration of BEOL-Compatible 3D Vertical FeNOR. VLSI Technology and Circuits 2024: 1-2 - [c15]Dong Zhang, Yang Feng, Zijie Zheng, Chen Sun, Qiwen Kong, Gan Liu, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong:
Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism. VLSI Technology and Circuits 2024: 1-2 - [i1]Yang Feng, Zhaohui Sun, Chengcheng Wang, Xinyi Guo, Junyao Mei, Yueran Qi, Jing Liu, Junyu Zhang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen:
Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities. CoRR abs/2401.08120 (2024) - 2023
- [j13]Yang Feng, Bing Chen, Mingfeng Tang, Yuerang Qi, Maoying Bai, Chengcheng Wang, Hai Wang, Xuepeng Zhan, Junyu Zhang, Jing Liu, Jixuan Wu, Jiezhi Chen:
Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing. Sci. China Inf. Sci. 66(12) (2023) - [j12]Shuhao Wu, Bo Chen, Chengcheng Wang, Junyao Mei, Maoying Bai, Xuepeng Zhan, Jixuan Wu, Junshuai Chai, Hao Xu, Xiaolei Wang, Jiezhi Chen:
Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing. Microelectron. J. 137: 105818 (2023) - [j11]Xiaotong Fang, Meng Zhang, Yifan Guo, Fei Chen, Binglu Chen, Xuepeng Zhan, Jixuan Wu, Fei Wu, Jiezhi Chen:
High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(10): 3224-3235 (2023) - [c14]Yang Feng, Yueran Qi, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen:
Flash-based Computing-in-memory Architectures with High-accuracy and Robust Reliabilities for General-purpose Applications. ASICON 2023: 1-4 - [c13]Shaoqi Yang, Xiaohuan Zhao, Kenie Xie, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen:
One-shot Read Processing to Enhance Cold Data Retention in Charge-trap TLC 3D NAND Flash. ASICON 2023: 1-4 - [c12]Zhichao Du, Chuanxue Sun, Xiaoyu Dou, Pengpeng Sang, Xuepeng Zhan, Chengji Jin, Jixuan Wu, Jiezhi Chen:
Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD. ICTA 2023: 51-52 - [c11]Junyao Mei, Bo Chen, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen:
Opto-Electronic Monolayer ZnO Memristor Produced via Low Temperature Atomic Layer Deposition. ICTA 2023: 53-54 - [c10]Xiaohuan Zhao, Shaoqi Yang, Kenie Xie, Yang Feng, Qianwen Wang, Pengpeng Sang, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen:
Error Bits Recovering in 3D NAND Flash Memory: A Novel State-Shift Re-Program (SRP) Scheme. ICTA 2023: 99-100 - [c9]Dong Zhang, Jixuan Wu, Qiwen Kong, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Zijie Zheng, Yuye Kang, Jiezhi Chen, Xiao Gong:
Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding. VLSI Technology and Circuits 2023: 1-2 - 2022
- [j10]Xuepeng Zhan, Jiezhi Chen, Zhigang Ji:
Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors. Sci. China Inf. Sci. 65(8): 1-2 (2022) - [j9]Mingtao Xu, Bo Chen, Qi Jin, Lu Tai, Xuepeng Zhan, Jiezhi Chen:
Voltage and temperature dependence of Random Telegraph Noise and their impacts on random number generator. Microelectron. J. 125: 105450 (2022) - [j8]Dong Chen, Yafei Wang, Zhenyu Shen, Jinfeng Liao, Jiezhi Chen, Shaobo Sun:
Long Time-Series Mapping and Change Detection of Coastal Zone Land Use Based on Google Earth Engine and Multi-Source Data Fusion. Remote. Sens. 14(1): 1 (2022) - [j7]Yuxuan Ye, Yafei Wang, Jinfeng Liao, Jiezhi Chen, Yangfan Zou, Yuan Liu, Chunye Feng:
Spatiotemporal Pattern Analysis of Land Use Functions in Contiguous Coastal Cities Based on Long-Term Time Series Remote Sensing Data: A Case Study of Bohai Sea Region, China. Remote. Sens. 14(15): 3518 (2022) - [j6]Menghua Jia, Yachen Kong, Xuepeng Zhan, Meng Zhang, Fei Wu, Jiezhi Chen:
Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 41(11): 4797-4807 (2022) - [j5]Ruibin Mao, Bo Wen, Mingrui Jiang, Jiezhi Chen, Can Li:
Experimentally-Validated Crossbar Model for Defect-Aware Training of Neural Networks. IEEE Trans. Circuits Syst. II Express Briefs 69(5): 2468-2472 (2022) - [c8]Xiaotong Fang, Meng Zhang, Yifan Guo, Fei Chen, Binglu Chen, Xuepeng Zhan, Jixuan Wu, Fei Wu, Jiezhi Chen:
Work-in-Progress: High-Precision Short-Term Lifetime Prediction in TLC 3D NAND Flash Memory as Hot-data Storage. CASES 2022: 11-12 - [c7]Qian Wei, Zhaoyan Shen, Yiheng Tong, Zhiping Jia, Lei Ju, Jiezhi Chen, Bingzhe Li:
Re-LSM: A ReRAM-Based Processing-in-Memory Framework for LSM-Based Key-Value Store. ICCAD 2022: 44:1-44:9 - [c6]Kenie Xie, Pena Guo, Fei Chen, Binglu Chen, Xiaotong Fang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen:
Large Suppression to Lateral Charge Migration (LCM) Related Error Bits in Charge-Trap TLC 3D NAND Flash. ICTA 2022: 24-25 - 2021
- [j4]Fei Wang, Yuan Li, Xiaolei Ma, Jiezhi Chen:
Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory. IEEE Access 9: 47391-47398 (2021) - [j3]Yang Feng, Fei Wang, Xuepeng Zhan, Yuan Li, Jiezhi Chen:
Flash memory based computing-in-memory system to solve partial differential equations. Sci. China Inf. Sci. 64(6) (2021) - [c5]Yifang Xi, Xiaotong Fang, Yachen Kong, Yifan Guo, Hongzhe Lin, Xuepeng Zhan, Jiezhi Chen:
Bits Mapping in Triple-level-cell (TLC) Charge-trap (CT) 3D NAND Flash Memory and its Applications to IoT Security. ICTA 2021: 69-71 - 2020
- [j2]Xuepeng Zhan, Yifang Xi, Qianwen Wang, Weiqiang Zhang, Zhigang Ji, Jiezhi Chen:
Dual-Point Technique for Multi-Trap RTN Signal Extraction. IEEE Access 8: 88141-88146 (2020) - [j1]Yachen Kong, Meng Zhang, Xuepeng Zhan, Rui Cao, Jiezhi Chen:
Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 39(11): 4042-4051 (2020)
2010 – 2019
- 2019
- [c4]Rui Cao, Jixuan Wu, Wenjing Yang, Jiezhi Chen, Xiangwei Jiang:
Program/Erase Cycling Enhanced Lateral Charge Diffusion in Triple-Level Cell Charge-Trapping 3D NAND Flash Memory. IRPS 2019: 1-4 - [c3]Xiaolei Ma, Xiangwei Jiang, Jiezhi Chen, Liwei Wang, Yunfei En:
Scaling Behaviour of State-to-State Coupling During Hole Trapping at Si/SiO2. IRPS 2019: 1-4 - 2011
- [c2]Hao Wang, Jiezhi Chen, Chenda Liao, Zuohua Tian:
An Artificial Intelligence Approach to Price Design for Improving AQM Performance. GLOBECOM 2011: 1-5 - [c1]Hao Wang, Bo Wang, Jiezhi Chen, Zuohua Tian:
Design and analysis of effective price for congestion control. LCN 2011: 510-518
Coauthor Index
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last updated on 2024-10-28 20:11 CET by the dblp team
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