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Michael Schröter
Person information
- affiliation: University of California San Diego, La Jolla, CA, USA
- affiliation: Dresden University of Technology, Germany
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2020 – today
- 2023
- [c32]Markus Müller, Mario Krattenmacher, Hendrik Leenders, Sara Hamzeloui
, Colombo R. Bolognesi, Christoph Jungemann
Physics-Based Compact Modeling of the Transfer Current in III-V DHBTs with the Generalized Integral Charge Control Relation. BCICTS 2023: 12-15 - [c31]Sara Hamzeloui
Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz. BCICTS 2023: 145-148 - [c30]Christoph Weimer
Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs. BCICTS 2023: 249-252 - [c29]Markus Müller, Christoph Weimer
Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2. ESSDERC 2023: 45-48 - 2022
- [j12]Mario Krattenmacher
DMT-core: A Python Toolkit for Semiconductor Device Engineers. J. Open Source Softw. 7(75): 4298 (2022) - [c28]Xiaodi Jin, Guangsheng Liang
Thermal impedance of SiGe HBTs: Characterization and modeling. BCICTS 2022: 1-4 - [c27]Michael Schröter, Markus Müller, Mario Krattenmacher:
Device modeling tools and their application to SiGe HBT development. BCICTS 2022: 1-8 - [c26]Markus Müller, Tobias Nardmann, Maximilian Froitzheim, Michael Schröter:
Characterization and Modeling of Thermal Coupling in Multi-Finger InP DHBTs. BCICTS 2022: 208-211 - [c25]Tobias Nardmann, Plamen Kolev, Nick Tao, Michael Schröter:
Geometry scalable compact modeling of GaAs HBTs. BCICTS 2022: 212-215 - [c24]Christoph Weimer
Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs. BCICTS 2022: 216-223 - [d1]Markus Müller, Philippe Dollfus, Michael Schröter:
Bulk Velocity Field Characteristics of GaAs, InP, InAs and GaSb for Several Doping Concentrations at 300K. IEEE DataPort, 2022 - 2021
- [c23]Markus Müller, Michael Schröter, Christoph Jungemann
Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs. BCICTS 2021: 1-4 - [c22]Boli Peng, Sven Mothes, Manojkumar Annamalai, Michael Schröter:
Evaluation of Stacked-CNTFET Structures for High-performance Applications. BCICTS 2021: 1-4 - [c21]S. Phillips, Ed Preisler, J. Zheng, S. Chaudhry, M. Racanelli, Markus Müller, Michael Schröter, W. McArthur, D. Howard:
Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications. BCICTS 2021: 1-5 - [c20]Christoph Weimer
An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs. BCICTS 2021: 1-4 - 2020
- [j11]Yaxin Zhang
3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation. IEEE J. Solid State Circuits 55(6): 1471-1481 (2020) - [c19]Xiaodi Jin
Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K. BCICTS 2020: 1-4 - [c18]Michael Schröter, Andreas Pawlak, Anindya Mukherjee, Didier Céli, Mario Krattenmacher:
HICUM/L2: Extensions over the last decade. BCICTS 2020: 1-4 - [c17]Hanbin Ying, Sunil G. Rao, Jeffrey W. Teng
Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing. BCICTS 2020: 1-4
2010 – 2019
- 2019
- [j10]Gerhard P. Fettweis
Architecture and Advanced Electronics Pathways Toward Highly Adaptive Energy- Efficient Computing. Proc. IEEE 107(1): 204-231 (2019) - [c16]Ahmed Omar, Anindya Mukherjee, Wenfeng Liang, Yaxin Zhang
82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency. BCICTS 2019: 1-4 - [c15]Paulius Sakalas, Anindya Mukherjee, Michael Schröter:
Distortion Analysis of CE and CB SiGe HBT Power-Cells with fmax beyond 220 GHz for Millimeter-Wave Applications. BCICTS 2019: 1-4 - [c14]Michael Schröter, Mario Krattenmacher:
Mathematical foundation for constructing accurate dynamic bipolar transistor compact models. BCICTS 2019: 1-4 - [c13]Sabine Kolodinski, Boli Peng, C. Esposito, Yves Zimmermann, Michael Schröter, Xin Xu, Paolo Valerio Testa, Corrado Carta
IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF. ESSDERC 2019: 74-77 - 2018
- [c12]Gerald Wedel, T. Nardmanrr, Michael Schröter:
On the use of Drift-Diffusion and Hydrodynamic Transport Models for Simulating the Negative Differential Mobility Effect. BCICTS 2018: 1-4 - [c11]Michael Schröter, Sophia Falk:
Modeling High-Current Effects in Bipolar Transistors: A Theory Review. BCICTS 2018: 219-222 - 2017
- [j9]Thomas W. Crowe, William R. Deal, Michael Schröter, Ching-Kuang C. Tzuang, Ke Wu
Terahertz RF Electronics and System Integration [Scanning the Issue]. Proc. IEEE 105(6): 985-989 (2017) - [j8]Pascal Chevalier
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE 105(6): 1035-1050 (2017) - [j7]Michael Schröter, Tommy Rosenbaum, Pascal Chevalier
SiGe HBT Technology: Future Trends and TCAD-Based Roadmap. Proc. IEEE 105(6): 1068-1086 (2017) - [c10]Mathieu Jaoul
Avalanche compact model featuring SiGe HBTs characteristics up to BVcbo. ESSDERC 2017: 70-73 - [c9]Igor Bejenari, Michael Schröter, Martin Claus:
Analytical drain current model for non-ballistic Schottky-Barrier CNTFETs. ESSDERC 2017: 90-93 - 2016
- [c8]Anindya Mukherjee, Andreas Pawlak, Michael Schröter, Didier Céli, Zoltan Huszka:
Implementation and quality testing for compact models implemented in Verilog-A. DATE 2016: 403-408 - 2015
- [c7]Anibal Pacheco-Sanchez
Contact resistance extraction methods for CNTFETs. ESSDERC 2015: 298-301 - [c6]Michael Jenning, Bernhard Klein, Ronny Hahnel, Dirk Plettemeier, David Fritsche, Gregor Tretter, Corrado Carta
Energy-Efficient Transceivers for Ultra-Highspeed Computer Board-to-Board Communication. ICUWB 2015: 1-5 - 2014
- [c5]Jana Tittmann
Hysteresis-free carbon nanotube field-effect transistors without passivation. NANOARCH 2014: 137-138 - 2013
- [c4]Daniel Foty, Bruce Smith, Saurabh Sinha
Expanding wireless bandwidth in a power-efficient way: developing a viable mm-wave radio technology. EWDTS 2013: 1-6 - 2010
- [b1]Michael Schröter, Anjan Chakravorty:
Compact Hierarchical Bipolar Transistor Modeling With HiCUM. International Series on Advances in Solid State Electronics and Technology, World Scientific 2010, ISBN 978-981-4273-21-3, pp. 1-752
2000 – 2009
- 2009
- [c3]Stefaan Decoutere, Stefaan Van Huylenbroeck, Bernd Heinemann, Alexander Fox, Pascal Chevalier
Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. CICC 2009: 347-354 - 2007
- [c2]Wolfgang Schneider, Michael Schröter, W. Kraus, Holger Wittkopf:
Interactive presentation: Statistical simulation of high-frequency bipolar circuits. DATE 2007: 1397-1402 - 2005
- [j6]Michael Schröter:
High-Frequency Circuit Design Oriented Compact Bipolar Transistor Modeling with HICUM. IEICE Trans. Electron. 88-C(6): 1098-1113 (2005) - 2003
- [c1]Reimund Wittmann, Jürgen Hartung, Hans-Joachim Wassener, Günther Tränkle, Michael Schröter:
Hot Topic Session: RF Design Technology for Highly Integrated Communication Systems. DATE 2003: 10842-10849
1990 – 1999
- 1999
- [j5]Michael Schröter, Hans-Martin Rein, Winfried Rabe, Reinhard Reimann, Hans-Joachim Wassener, Andreas Koldehoff:
Physics- and process-based bipolar transistor modeling for integrated circuit design. IEEE J. Solid State Circuits 34(8): 1136-1149 (1999) - 1998
- [j4]Michael Schröter, David J. Walkey:
Correction To "Physical Modeling Of Lateral Scaling In Bipolar Transistors". IEEE J. Solid State Circuits 33(1): 171 (1998) - 1996
- [j3]Colin C. McAndrew, Jerold A. Seitchik, Derek F. Bowers, Mark Dunn, Mark Foisy, Ian Getreu, Marc McSwain, Shahriar Moinian, James Parker, David J. Roulston, Michael Schröter, Paul van Wijnen, Lawrence F. Wagner:
VBIC95, the vertical bipolar inter-company model. IEEE J. Solid State Circuits 31(10): 1476-1483 (1996) - [j2]Michael Schröter, David J. Walkey:
Physical modeling of lateral scaling in bipolar transistors. IEEE J. Solid State Circuits 31(10): 1484-1492 (1996) - 1995
- [j1]Michael Schröter, Hans-Martin Rein:
Investigation of very fast and high-current transients in digital bipolar IC's using both a new compact model and a device simulator. IEEE J. Solid State Circuits 30(5): 551-562 (1995)
Coauthor Index
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