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Snezana Golubovic

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2020 – today

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2022
[j16]
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  - journals/jcsc/VeljkovicMDGDPSSAPMPRD22
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Sandra Veljkovic, Nikola Mitrovic, Vojkan Davidovic, Snezana Golubovic, Snezana Djoric-Veljkovic, Albena Paskaleva, Dencho Spassov, Srboljub Stankovic, Marko S. Andjelkovic, Zoran Prijic, Ivica Manic, Aneta Prijic, Goran S. Ristic, Danijel Dankovic:
Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. J. Circuits Syst. Comput. 31(18): 2240003:1-2240003:25 (2022)

2010 – 2019

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2018
[j15]
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Danijel Dankovic, Ivica Manic, Aneta Prijic, Vojkan Davidovic, Zoran Prijic, Snezana Golubovic, Snezana Djoric-Veljkovic, Albena Paskaleva, D. Spassov, Ninoslav Stojadinovic:
A review of pulsed NBTI in P-channel power VDMOSFETs. Microelectron. Reliab. 82: 28-36 (2018)
[j14]
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Ninoslav Stojadinovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Srboljub Stankovic, Aneta Prijic, Zoran Prijic, Ivica Manic, Danijel Dankovic:
NBTI and irradiation related degradation mechanisms in power VDMOS transistors. Microelectron. Reliab. 88-90: 135-141 (2018)
2011
[j13]
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Ivica Manic, Danijel Dankovic, Aneta Prijic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Zoran Prijic, Ninoslav Stojadinovic:
NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions. Microelectron. Reliab. 51(9-11): 1540-1543 (2011)
2010
[j12]
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Ninoslav Stojadinovic, Danijel Dankovic, Ivica Manic, Aneta Prijic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Zoran Prijic:
Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress. Microelectron. Reliab. 50(9-11): 1278-1282 (2010)

2000 – 2009

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2009
[j11]
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Ivica Manic, Danijel Dankovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic:
Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs. Microelectron. Reliab. 49(9-11): 1003-1007 (2009)
2008
[j10]
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  - journals/iet-cds/ManicDDDGS08
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Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Danijel Dankovic, Snezana Golubovic, Ninoslav Stojadinovic:
Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs. IET Circuits Devices Syst. 2(2): 213-221 (2008)
[j9]
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Danijel Dankovic, Ivica Manic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Ninoslav Stojadinovic:
Negative bias temperature instability in n-channel power VDMOSFETs. Microelectron. Reliab. 48(8-9): 1313-1317 (2008)
2007
[j8]
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Danijel Dankovic, Ivica Manic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Ninoslav Stojadinovic:
Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs. Microelectron. Reliab. 47(9-11): 1400-1405 (2007)
2006
[j7]
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Danijel Dankovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic:
NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs. Microelectron. Reliab. 46(9-11): 1828-1833 (2006)
2005
[j6]
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Ninoslav Stojadinovic, Ivica Manic, Vojkan Davidovic, Danijel Dankovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Sima Dimitrijev:
Effects of electrical stressing in power VDMOSFETs. Microelectron. Reliab. 45(1): 115-122 (2005)
[j5]
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  - journals/mr/StojadinovicDDDMG05
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Ninoslav Stojadinovic, Danijel Dankovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Ivica Manic, Snezana Golubovic:
Negative bias temperature instability mechanisms in p-channel power VDMOSFETs. Microelectron. Reliab. 45(9-11): 1343-1348 (2005)
2003
[j4]
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  - journals/mr/Djoric-VeljkovicMDGS03
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Snezana Djoric-Veljkovic, Ivica Manic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic:
Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs. Microelectron. Reliab. 43(9-11): 1455-1460 (2003)
2002
[j3]
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  - journals/mr/StojadinovicMDDGD02
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Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Sima Dimitrijev:
Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs. Microelectron. Reliab. 42(4-5): 669-677 (2002)
[j2]
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Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Danijel Dankovic, Snezana Golubovic, Sima Dimitrijev:
Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs. Microelectron. Reliab. 42(9-11): 1465-1468 (2002)
2001
[j1]
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  - journals/mr/StojadinovicMDDGD01
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Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Sima Dimitrijev:
Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs. Microelectron. Reliab. 41(9-10): 1373-1378 (2001)

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