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Youngcheol Chae
Young Cheol Chae
Person information
- affiliation: Yonsei University, Department of Electrical and Electronic Engineering, Seoul, South Korea
- affiliation (2009 - 2011): Delft University of Technology, The Netherlands
- affiliation (PhD 2009): Yonsei University, Department of Electrical and Electronic Engineering, Seoul, South Korea
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2020 – today
- 2024
- [j38]Hyeonho Han
, Byungchoul Park
A Highly Digital 143.2-dB DR Sub-1° Phase Error Impedance Monitoring IC With Pulsewidth Modulation Frontend. IEEE J. Solid State Circuits 59(4): 1017-1025 (2024) - [j37]Moon Hyung Jang
A 1024-Channel 268-nW/Pixel 36×36 μm2/Channel Data-Compressive Neural Recording IC for High-Bandwidth Brain-Computer Interfaces. IEEE J. Solid State Circuits 59(4): 1123-1136 (2024) - [c66]DongSeok Cho, Byungchoul Park, Hyun-Seung Choi, Myung-Jae Lee, Youngcheol Chae:
A 30fps 64×64 CMOS Flash LiDAR Sensor with Push-Pull Analog Counter Achieving 0.1% Depth Uncertainty at 70m Detection Range. VLSI Technology and Circuits 2024: 1-2 - [c65]Taejune Jeon, Byeongseol Kim, Changuk Lee, Danbi Ahn, Daerl Park, Jaesuk Sung, Hee Young Kim, Heonjin Choi, Joonsung Bae, Youngcheol Chae:
A Wireless Neurostimulator Using Body-Coupled Link for Multisite Stimulation in Freely Behaving Animals. VLSI Technology and Circuits 2024: 1-2 - [c64]Byungchoul Park, Hyun-Seung Choi, Jinwoong Jeong, Jimin Cheon, Myung-Jae Lee, Youngcheol Chae:
A 7.2inch 5.5Mpixel 600mW SPAD X-Ray Detector with 116.7 dB Dynamic Range. VLSI Technology and Circuits 2024: 1-2 - 2023
- [j36]Yongtae Lee
A 0.5-ms 47.5-nJ Resistor-to-Digital Converter for Resistive BTEX Sensor Achieving 0.1-to-5 ppb Resolution. IEEE J. Solid State Circuits 58(3): 827-837 (2023) - [j35]Hyunchul Yoon
A 65-dB-SNDR Pipelined SAR ADC Using PVT-Robust Capacitively Degenerated Dynamic Amplifier. IEEE J. Solid State Circuits 58(4): 961-971 (2023) - [j34]Byungchoul Park
A 113.3-dB Dynamic Range 600 Frames/s SPAD X-Ray Detector With Seamless Global Shutter and Time-Encoded Extrapolation Counter. IEEE J. Solid State Circuits 58(11): 2965-2975 (2023) - [j33]Yongtae Lee
A 0.9-V 6400-μm2 Resistor-Based Temperature Sensor With a One-Point Trimmed 3σ Inaccuracy of ±0.64 °C from -50°C to 125 °C. IEEE Trans. Circuits Syst. II Express Briefs 70(9): 3313-3317 (2023) - [c63]Yigi Kwon, Sangwoo Lee, Changuk Lee, Hyunchul Yoon, Byounghan Min, Youngcheol Chae:
An 11bit 360MS/s Pipelined SAR ADC with Dynamic Negative-C Assisted Residue Amplifier. A-SSCC 2023: 1-3 - [c62]Hyeyeon Lee, Donguk Seo, Young-Jin Woo, Yoonmyung Lee, Inhee Lee, Youngcheol Chae:
A 23.9 µW 13.6-bit Period Modulation-Based Capacitance-to-Digital Converter with Dynamic Current Mirror Front-end Achieving Capacitor Range of 1 to 68 pF. A-SSCC 2023: 1-3 - [c61]Yoondeok Na, Seokho Yun, Myung-Jae Lee, Youngcheol Chae:
An 8.5ps Resolution, $2000\mu\mathrm{m}^{2}$ Phase-Domain Delta-Sigma TDC for Lidar Applications. A-SSCC 2023: 1-3 - [c60]Junghyun Yoon, Moon Hyung Jang
A 243μW 97.4dB-DR 50kHz-BW Multi-Rate CT Zoom ADC with Inherent DAC Mismatch Tolerance. CICC 2023: 1-2 - [c59]Byungchoul Park, Byungwook Ahn, Hyun-Seung Choi, Jinwoong Jeong, Kangmin Hwang, Taewoo Kim, Myung-Jae Lee, Youngcheol Chae:
A 400 × 200 600fps 117.7dB-DR SPAD X-Ray Detector with Seamless Global Shutter and Time-Encoded Extrapolation Counter. ISSCC 2023: 100-101 - [c58]Hyeonho Han, Woojun Choi, Jaehyun Kim, Jaesuk Sung, Heonjin Choi, Youngcheol Chae:
A Highly-Digital PWM-Based Impedance Monitoring IC with 143.2dB DR and 17.7fFrms Resolution. VLSI Technology and Circuits 2023: 1-2 - [c57]Moon Hyung Jang
A 1024-Channel 268 nW/pixel 36x36 μm2/ch Data-Compressive Neural Recording IC for High-Bandwidth Brain-Computer Interfaces. VLSI Technology and Circuits 2023: 1-2 - [c56]Yu-Cheng Lin, Chanmin Park, Wenda Zhao, Nan Sun, Youngcheol Chae, Chia-Hsiang Yang:
A 26.4mW, 18.6MS/s Image Reconstruction Processor for IoT Compressive Sensing. VLSI Technology and Circuits 2023: 1-2 - 2022
- [j32]Woojun Choi
A 0.9-V 28-MHz Highly Digital CMOS Dual-RC Frequency Reference With ±200 ppm Inaccuracy From -40 °C to 85 °C. IEEE J. Solid State Circuits 57(8): 2418-2428 (2022) - [j31]Hyeyeon Lee
A 0.033-mm2 21.5-aF to 114.9-aF Resolution Continuous-Time Δ Σ Capacitance-to-Digital Converter Achieving Parasitic Capacitance Immunity Up to 480 pF. IEEE J. Solid State Circuits 57(10): 3048-3057 (2022) - [j30]Changuk Lee
A Miniaturized Wireless Neural Implant With Body-Coupled Power Delivery and Data Transmission. IEEE J. Solid State Circuits 57(11): 3212-3227 (2022) - [j29]Junyoung Jang
A 1.5 V 2 GS/s 82.1 dB-SFDR Track and Hold Circuit Based on the Time-Divided Post-Distortion Cancelation Technique. IEEE Trans. Circuits Syst. II Express Briefs 69(12): 4719-4723 (2022) - [c55]Changuk Lee, Byeongseol Kim, Jejung Kim, Sangwon Lee, Taejune Jeon, Woojun Choi, Sunggu Yang, Jong-Hyun Ahn
A Miniaturized Wireless Neural Implant with Body-Coupled Data Transmission and Power Delivery for Freely Behaving Animals. ISSCC 2022: 1-3 - [c54]Youngcheol Chae:
Low-power Continuous-time Delta-sigma ADCs. VLSI-DAT 2022: 1 - [c53]Hyunchul Yoon, Teawoong Kim, Yigi Kwon, Youngcheol Chae:
A 50 MS/s 65 dB-SNDR Pipelined SAR ADC using Capacitively Degenerated Two-Stage Dynamic Amplifier. VLSI Technology and Circuits 2022: 88-89 - 2021
- [j28]Moon Hyung Jang
A 134-μW 99.4-dB SNDR Audio Continuous-Time Delta-Sigma Modulator With Chopped Negative-R and Tri-Level FIR-DAC. IEEE J. Solid State Circuits 56(6): 1761-1771 (2021) - [j27]Chanmin Park
A 51-pJ/Pixel 33.7-dB PSNR 4× Compressive CMOS Image Sensor With Column-Parallel Single-Shot Compressive Sensing. IEEE J. Solid State Circuits 56(8): 2503-2515 (2021) - [j26]Byungchoul Park
A 64 × 64 SPAD-Based Indirect Time-of-Flight Image Sensor With 2-Tap Analog Pulse Counters. IEEE J. Solid State Circuits 56(10): 2956-2967 (2021) - [j25]Taewoong Kim
A 2.1 mW 2 MHz-BW 73.8 dB-SNDR Buffer-Embedded Noise-Shaping SAR ADC. IEEE Trans. Circuits Syst. I Regul. Pap. 68(12): 5029-5037 (2021) - [c52]Hyeyeon Lee, Changuk Lee, Jae-Youl Lee, Yoon-Kyung Choi, Youngcheol Chae:
A 0.033-mm2 21.5-aF Resolution Continuous-Time Delta-Sigma Capacitance-to-Digital Converter with Parasitic Capacitance Immunity up to 480pF. A-SSCC 2021: 1-3 - [c51]Youngcheol Chae, Moon Hyung Jang
A Negative R-Assisted Amplifier on the Virtual Ground and Its Applications. CICC 2021: 1-6 - [c50]Jan A. Angevare, Youngcheol Chae, Kofi A. A. Makinwa:
A Highly Digital 2210μm2 Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. ISSCC 2021: 76-78 - [c49]Woojun Choi, Jan A. Angevare, Injun Park, Kofi A. A. Makinwa, Youngcheol Chae:
31.2 A 0.9V 28MHz Dual-RC Frequency Reference with 5pJ/Cycle and ±200 ppm Inaccuracy from -40°C to 85°C. ISSCC 2021: 434-436 - [c48]Youngcheol Chae, Yun-Shiang Shu, Jens Anders, Viola Schaffer, Takashi Oshima
F2: Pushing the Frontiers in Accuracy for Data Converters and Analog Circuits. ISSCC 2021: 517-519 - [c47]Yongtae Lee, Byeonghwa Cho, Changuk Lee, Jongbaeg Kim, Youngcheol Chae:
A 47.5nJ Resistor-to-Digital Converter for Detecting BTEX with 0.06ppb-Resolution. VLSI Circuits 2021: 1-2 - [c46]Sangwoo Lee
A 0.6V 86.5dB-DR 40kHz-BW Inverter-Based Continuous-Time Delta-Sigma Modulator with PVT-Robust Body-Biasing Technique. VLSI Circuits 2021: 1-2 - 2020
- [j24]Injun Park
A 640 $\times$ 640 Fully Dynamic CMOS Image Sensor for Always-On Operation. IEEE J. Solid State Circuits 55(4): 898-907 (2020) - [j23]Sangwoo Lee
A 5.2-Mpixel 88.4-dB DR 12-in CMOS X-Ray Detector With 16-bit Column-Parallel Continuous-Time Incremental ΔΣ ADCs. IEEE J. Solid State Circuits 55(11): 2878-2888 (2020) - [j22]Changuk Lee
A 6.5-μW 10-kHz BW 80.4-dB SNDR Gm-C-Based CT ∆∑ Modulator With a Feedback-Assisted Gm Linearization for Artifact-Tolerant Neural Recording. IEEE J. Solid State Circuits 55(11): 2889-2901 (2020) - [j21]Zhichao Tan
Incremental Delta-Sigma ADCs: A Tutorial Review. IEEE Trans. Circuits Syst. 67-I(12): 4161-4173 (2020) - [c45]Sungsik Park, Yunhong Kim, Woojun Choi, Yong-Tae Lee, Sungbeen Kim, Youngmin Shin, Youngcheol Chae:
A DTMOST-based Temperature Sensor with 3σ Inaccuracy of ±0.9°C for Self-Refresh Control in 28nm Mobile DRAM. CICC 2020: 1-4 - [c44]Jaewook Kwon, Changuk Lee, Youngcheol Chae, Boris Murmann:
Design Considerations for External Compensation Approaches to OLED Display Degradation. ISCAS 2020: 1-5 - [c43]Stephen Weinreich, Dante G. Muratore, Youngcheol Chae, Thomas McKay, Boris Murmann:
Implications of Finite Clock Transition Time for LPTV Circuit Analysis. ISCAS 2020: 1-5 - [c42]Moon Hyung Jang
9.2 A 134µW 24kHz-BW 103.5d8-DR CT ΔΣ Modulator with Chopped Negative-R and Tri-Level FIR DAC. ISSCC 2020: 1-3 - [c41]Yunhong Kim, Sungsik Park, Seung-Woo Song, Sangwoo Lee
23.8 A 41μW 16MS/s 99.2dB-SFDR Capacitively Degenerated Dynamic Amplifier with Nonlinear-Slope-Factor Compensation. ISSCC 2020: 358-360 - [c40]Changuk Lee, Taejune Jeon, Moon Hyung Jang
26.6 A 6.5µW 10kHz-BW 80.4dB-SNDR Continuous-Time ΔΣ Modulator with Gm-Input and 300mVpp Linear Input Range for Closed-Loop Neural Recording. ISSCC 2020: 410-412 - [c39]Sangwoo Lee
28.3 A 5.2Mpixel 88.4dB-DR 12in CMOS X-Ray Detector with 16b Column-Parallel Continuous-Time ΔΣ ADCs. ISSCC 2020: 434-436 - [c38]Wenda Zhao, Chanmin Park, Injun Park, Nan Sun, Youngcheol Chae:
An Always-on 4× Compressive VGA CMOS Imager with 51pJ/Pixel and >32dB PSNR. VLSI Circuits 2020: 1-2
2010 – 2019
- 2019
- [j20]Moon Hyung Jang
Analysis and Design of Low-Power Continuous-Time Delta-Sigma Modulator Using Negative-R Assisted Integrator. IEEE J. Solid State Circuits 54(1): 277-287 (2019) - [j19]Youngcheol Chae
Introduction to the Special Issue on the 2019 IEEE International Solid-State Circuits Conference (ISSCC). IEEE J. Solid State Circuits 54(12): 3243-3246 (2019) - [j18]Seung-Woo Song
A CMOS VEGF Sensor for Cancer Diagnosis Using a Peptide Aptamer-Based Functionalized Microneedle. IEEE Trans. Biomed. Circuits Syst. 13(6): 1288-1299 (2019) - [c37]Taewoong Kim, Youngcheol Chae:
A 2MHz BW Buffer-Embedded Noise-Shaping SAR ADC Achieving 73.8dB SNDR and 87.3dB SFDR. CICC 2019: 1-4 - [c36]Yong-Tae Lee, Woojun Choi, Taewoong Kim, Seung-Woo Song, Kofi A. A. Makinwa, Youngcheol Chae:
A 5800-μm2 Resistor-Based Temperature Sensor With a One-Point Trimmed Inaccuracy of ±1.2 °C (3σ) From -50 °C to 105 °C in 65-nm CMOS. ESSCIRC 2019: 68-71 - [c35]Seung-Woo Song, Changuk Lee, Moon Hyung Jang
A 185 μW -105.1 dB THD 88.6 dB SNDR Negative-R Stabilized Audio Preamplifier. ESSCIRC 2019: 261-264 - [c34]Seon Hyeog Kim, Hyeong Min Lee, Gu-Young Kwon
Harmonic Based Diagnostics for Aging Lithium-Ion Battery. ISIE 2019: 1971-1976 - [c33]Injun Park, Chanmin Park, Jimin Cheon, Youngcheol Chae:
A 76mW 500fps VGA CMOS Image Sensor with Time-Stretched Single-Slope ADCs Achieving 1.95e- Random Noise. ISSCC 2019: 100-102 - [c32]Seung-Woo Song, Jukwan Na, Moon Hyung Jang
A Capacitive Biosensor for Cancer Diagnosis Using a Functionalized Microneedle and a 13.7b-Resolution Capacitance-to-Digital Converter from 1 to 100nF. ISSCC 2019: 194-196 - [c31]Hyeonho Han, Woojun Choi, Youngcheol Chae:
A 0.02mm2 100dB-DR Impedance Monitoring IC with PWM-Dual GRO Architecture. VLSI Circuits 2019: 60- - [c30]Injun Park, Woojin Jo, Chanmin Park, Byungchoul Park, Jimin Cheon, Youngcheol Chae:
A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition. VLSI Circuits 2019: 214- - [c29]Byungchoul Park, Injun Park, Woojun Choi, Youngcheol Chae:
A 64×64 APD-Based ToF Image Sensor with Background Light Suppression up to 200 klx Using In-Pixel Auto-Zeroing and Chopping. VLSI Circuits 2019: 256- - 2018
- [j17]Hyunseok Hwang
A 1.8-V 6.9-mW 120-fps 50-Channel Capacitive Touch Readout With Current Conveyor AFE and Current-Driven $\Delta \Sigma $ ADC. IEEE J. Solid State Circuits 53(1): 204-218 (2018) - [j16]Woojun Choi
A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ⋅K2 in 65-nm CMOS. IEEE J. Solid State Circuits 53(12): 3356-3367 (2018) - [j15]Sangkuk Jeon
A Parasitic Insensitive Catheter-Based Capacitive Force Sensor for Cardiovascular Diagnosis. IEEE Trans. Biomed. Circuits Syst. 12(4): 812-823 (2018) - [c28]Sangwoo Lee, Woojin Jo, Seung-Woo Song, Youngcheol Chae:
A 300-pW audio ΑΣ modulator with 100.5-dB DR using dynamic bias inverter. ASP-DAC 2018: 297-298 - [c27]Hyunseok Hwang, Hyeyeon Lee, Youngcheol Chae:
A 6.9mW 120fps 28×50 capacitive touch sensor for 1mm-φ stylus using current-driven ΔΣ ADCs. ASP-DAC 2018: 305-306 - [c26]Sangkuk Jeon, JiYong Lee, WonHyoung Ryu, Youngcheol Chae:
A 0.9m Long 0.5gf Resolution Catheter-based Force Sensor for Real-Time Force Monitoring of Cardiovascular Surgery. EMBC 2018: 3338-3341 - [c25]Youngcheol Chae, Mahdi Kashmiri, Kofi A. A. Makinwa:
Session 3 overview: Analog techniques: Analog subcommittee. ISSCC 2018: 48-49 - [c24]Woojun Choi, Yong-Tae Lee, Seonhong Kim, Sanghoon Lee, Jieun Jang, Junhyun Chun, Kofi A. A. Makinwa, Youngcheol Chae:
A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS. ISSCC 2018: 322-324 - [c23]Axel Thomsen, Bernhard Wicht, Pieter Harpe, Man Kay Law, Young Cheol Chae:
F6: Advances in energy efficient analog design. ISSCC 2018: 517-519 - [c22]Sangkuk Jeon, JiYong Lee, WonHyoung Ryu, Youngcheol Chae:
A 1.35 m Long 0.18 gf Resolution Differential Capacitive Force Sensor for Contact Force Monitoring. TENCON 2018: 889-892 - [c21]Changwook Lee, Moon Hyung Jang
A 1.2V 68µW 98.2DB-DR Audio Continuous-Time Delta-Sigma Modulator. VLSI Circuits 2018: 199-200 - 2017
- [j14]Dongseok Shin, Byungchoul Park, Youngcheol Chae
Structure variation effects on device reliability of single photon avalanche diodes. Microelectron. Reliab. 76-77: 610-613 (2017) - [c20]Myungjin Han, Go Eun Ha, Eunji Cheong, Gunhee Han, Youngcheol Chae:
An area/power efficient electrode-matched neural-spike detector embedded in implantable 256-channel MEA. BioCAS 2017: 1-4 - [c19]Hyunseok Hwang, Hyeyeon Lee, Hongchae Kim, Youngcheol Chae:
9.7 A 6.9mW 120fps 28×50 capacitive touch sensor with 41.7dB SNR for 1mm stylus using current-driven ΔΣ ADCs. ISSCC 2017: 170-171 - [c18]Woojun Choi, Taewoong Kim, Jongjoo Shim, Hyungsoo Kim, Gunhee Han, Youngcheol Chae:
23.8 A 1V 7.8mW 15.6Gb/s C-PHY transceiver using tri-level signaling for post-LPDDR4. ISSCC 2017: 402-403 - 2016
- [j13]Sangwoo Lee
A 300-µW Audio ΔΣ Modulator With 100.5-dB DR Using Dynamic Bias Inverter. IEEE Trans. Circuits Syst. I Regul. Pap. 63-I(11): 1866-1875 (2016) - 2015
- [j12]Inhee Lee, Gunhee Han, Youngcheol Chae:
A 2 mW, 50 dB DR, 10 MHz BW 5 × Interleaved Bandpass Delta-Sigma Modulator at 50 MHz IF. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(1): 80-89 (2015) - [j11]Myungjin Han, Boram Kim, Yi-An Chen, Hyojung Lee
Bulk Switching Instrumentation Amplifier for a High-Impedance Source in Neural Signal Recording. IEEE Trans. Circuits Syst. II Express Briefs 62-II(2): 194-198 (2015) - [c17]Yeo Myung Kim, Woojun Choi, Jaehoon Kim, Sanghoon Lee, Sangho Lee, Hyeongon Kim, Kofi A. A. Makinwa, Youngcheol Chae, Tae Wook Kim:
A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. ESSCIRC 2015: 267-270 - 2014
- [j10]Jaeyoung Bae, Daeyun Kim, Seokheon Ham, Youngcheol Chae, Minkyu Song:
A Two-Step A/D Conversion and Column Self-Calibration Technique for Low Noise CMOS Image Sensors. Sensors 14(7): 11825-11843 (2014) - [j9]Jaejin Yeo, Yongsuk Choi, Jeongjin Roh
A Current Regulator for Inverter-Based Massively Column-Parallel ΔΣ ADCs. IEEE Trans. Circuits Syst. II Express Briefs 61-II(4): 224-228 (2014) - [c16]Kamran Souri, Youngcheol Chae, Frank Thus, Kofi A. A. Makinwa:
12.7 A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3σ) from -40 to 125°C. ISSCC 2014: 222-223 - 2013
- [j8]Kamran Souri, Youngcheol Chae, Kofi A. A. Makinwa:
A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of ±0.15°C (3σ) From -55°C to 125°C. IEEE J. Solid State Circuits 48(1): 292-301 (2013) - [j7]Zhichao Tan, Roel Daamen, Aurelie Humbert, Youri Ponomarev, Youngcheol Chae, Michiel A. P. Pertijs:
A 1.2-V 8.3-nJ CMOS Humidity Sensor for RFID Applications. IEEE J. Solid State Circuits 48(10): 2469-2477 (2013) - [j6]Youngcheol Chae, Kamran Souri, Kofi A. A. Makinwa:
A 6.3 µW 20 bit Incremental Zoom-ADC with 6 ppm INL and 1 µV Offset. IEEE J. Solid State Circuits 48(12): 3019-3027 (2013) - [c15]Youngcheol Chae, Kamran Souri, Kofi A. A. Makinwa:
A 6.3µW 20b incremental zoom-ADC with 6ppm INL and 1µV offset. ISSCC 2013: 276-277 - 2012
- [j5]Rong Wu, Youngcheol Chae, Johan H. Huijsing, Kofi A. A. Makinwa:
A 20-b ± 40-mV Range Read-Out IC With 50-nV Offset and 0.04% Gain Error for Bridge Transducers. IEEE J. Solid State Circuits 47(9): 2152-2163 (2012) - [c14]Gaurav Singh, Rong Wu, Youngcheol Chae, Kofi A. A. Makinwa:
A 20bit continuous-time ΣΔ modulator with a Gm-C integrator, 120dB CMRR and 15 ppm INL. ESSCIRC 2012: 385-388 - [c13]Kamran Souri, Youngcheol Chae, Kofi A. A. Makinwa:
A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. ISSCC 2012: 208-210 - [c12]Yue Chen, Yang Xu, Youngcheol Chae, Adri Mierop, Xinyang Wang, Albert Theuwissen:
A 0.7e-rms-temporal-readout-noise CMOS image sensor for low-light-level imaging. ISSCC 2012: 384-386 - [c11]Zhichao Tan, Youngcheol Chae, Roel Daamen, Aurelie Humbert, Youri V. Ponomarev, Michiel A. P. Pertijs:
A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications. VLSIC 2012: 24-25 - 2011
- [j4]Youngcheol Chae, Jimin Cheon, Seunghyun Lim, Minho Kwon, Kwisung Yoo, Wunki Jung, Dong-Hun Lee
A 2.1 M Pixels, 120 Frame/s CMOS Image Sensor With Column-Parallel Delta Sigma ADC Architecture. IEEE J. Solid State Circuits 46(1): 236-247 (2011) - [j3]Seunghyun Lim, Jimin Cheon, Youngcheol Chae, Wunki Jung, Dong-Hun Lee
A 240-frames/s 2.1-Mpixel CMOS Image Sensor With Column-Shared Cyclic ADCs. IEEE J. Solid State Circuits 46(9): 2073-2083 (2011) - [c10]Zhichao Tan, Roel Daamen, Aurelie Humbert, Kamran Souri, Youngcheol Chae, Youri V. Ponomarev, Michiel A. P. Pertijs:
A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications. A-SSCC 2011: 105-108 - [c9]Navid Sarhangnejad, Rong Wu, Youngcheol Chae, Kofi A. A. Makinwa:
A continuous-time ΣΔ modulator with a Gm-C input stage, 120-dB CMRR and -87 dB THD. A-SSCC 2011: 245-248 - [c8]Kamran Souri, Youngcheol Chae, Youri Ponomarev, Kofi A. A. Makinwa:
A precision DTMOST-based temperature sensor. ESSCIRC 2011: 279-282 - [c7]Jianfeng Wu, Youngcheol Chae, Caspar P. L. van Vroonhoven, Kofi A. A. Makinwa:
A 50mW CMOS wind sensor with ±4% speed and ±2° direction error. ISSCC 2011: 106-108 - 2010
- [c6]Youngcheol Chae, Jimin Cheon, Seunghyun Lim, Dongmyung Lee, Minho Kwon, Kwisung Yoo, Wunki Jung, Dong-Hun Lee, Seogheon Ham, Gunhee Han:
A 2.1Mpixel 120frame/s CMOS image sensor with column-parallel ΔΣ ADC architecture. ISSCC 2010: 394-395
2000 – 2009
- 2009
- [j2]Youngcheol Chae, Gunhee Han:
Low Voltage, Low Power, Inverter-Based Switched-Capacitor Delta-Sigma Modulator. IEEE J. Solid State Circuits 44(2): 458-472 (2009) - 2008
- [c5]Youngcheol Chae, Inhee Lee, Gunhee Han:
A 0.7V 36μW 85dB-DR Audio ΔΣ Modulator Using Class-C Inverter. ISSCC 2008: 490-491 - 2007
- [c4]Inhee Lee, Youngcheol Chae, Gunhee Han:
A Low Power Dual-Mode Sigma-Delta Modulator for GSM/WCDMA Receivers. ICECS 2007: 1151-1154 - [c3]Kilhwan Kim, Unsun Cho, Seunghyun Lim, Youngcheol Chae, Yunho Jung, Gunhee Han, Jaeseok Kim:
A 1.5V mixed signal biomedical SOC for implantable cardioverter defibrillators. SoCC 2007: 7-10 - 2006
- [c2]Seogheon Ham, Yonghee Lee, Wunki Jung, Seunghyun Lim, Kwisung Yoo, Youngcheol Chae, Jihyun Cho, Dongmyung Lee, Gunhee Han:
CMOS image sensor with analog gamma correction using nonlinear single-slope ADC. ISCAS 2006 - 2005
- [j1]Minho Kwon, Youngcheol Chae, Gunhee Han:
Sub-µW Switched-Capacitor Circuits Using a Class-C Inverter. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 88-A(5): 1313-1319 (2005) - 2004
- [c1]Youngcheol Chae, Minho Kwon, Gunhee Han:
A 0.8-µW switched-capacitor sigma-delta modulator using a class-C inverter. ISCAS (1) 2004: 1152-1155
Coauthor Index
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last updated on 2024-11-15 19:32 CET by the dblp team
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