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Hiroki Fujisawa
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2000 – 2009
- 2007
- [j7]Hiroki Fujisawa, Shuichi Kubouchi, Koji Kuroki, Naohisa Nishioka, Yoshiro Riho, Hiromasa Noda, Isamu Fujii, Hideyuki Yoko, Ryuuji Takishita, Takahiro Ito, Hitoshi Tanaka, Masayuki Nakamura:
An 8.1-ns Column-Access 1.6-Gb/s/pin DDR3 SDRAM With an 8: 4 Multiplexed Data-Transfer Scheme. IEEE J. Solid State Circuits 42(1): 201-209 (2007) - 2006
- [c1]Hiroki Fujisawa, Shuichi Kubouchi, Koji Kuroki, Naohisa Nishioka, Yoshiro Riho, Hiromasa Noda, Isamu Fujii, Hideyuki Yoko, Ryuuji Takishita, Takahiro Ito, Hitoshi Tanaka, Masayuki Nakamura:
An 8.4ns Column-Access 1.3Gb/s/pin DDR3 SDRAM with an 8: 4 Multiplexed Data-Transfer Scheme. ISSCC 2006: 557-566 - 2005
- [j6]Hiroki Fujisawa, Masayuki Nakamura, Yasuhiro Takai, Yasuji Koshikawa, Tatsuya Matano, Seiji Narui, Narikazu Usuki, Chiaki Dono, Shinichi Miyatake, Makoto Morino, Koji Arai, Shuichi Kubouchi, Isamu Fujii, Hideyuki Yoko, Takao Adachi:
1.8-V 800-Mb/s/pin DDR2 and 2.5-V 400-Mb/s/pin DDR1 compatibly designed 1Gb SDRAM with dual-clock input-latch scheme and hybrid multi-oxide output buffer. IEEE J. Solid State Circuits 40(4): 862-869 (2005) - 2003
- [j5]Tatsuya Matano, Yasuhiro Takai, Tsugio Takahashi, Yuusuke Sakito, Isamu Fujii, Yoshihiro Takaishi, Hiroki Fujisawa, Shuichi Kubouchi, Seiji Narui, Koji Arai, Makoto Morino, Masayuki Nakamura, Shinichi Miyatake, Toshihiro Sekiguchi, Kuniaki Koyama:
A 1-Gb/s/pin 512-Mb DDRII SDRAM using a digital DLL and a slew-rate-controlled output buffer. IEEE J. Solid State Circuits 38(5): 762-768 (2003) - 2002
- [j4]Tomonori Sekiguchi, Kiyoo Itoh, Tsugio Takahashi, Masahiro Sugaya, Hiroki Fujisawa, Masayuki Nakamura, Kazuhiko Kajigaya, Katsutaka Kimura:
A low-impedance open-bitline array for multigigabit DRAM. IEEE J. Solid State Circuits 37(4): 487-498 (2002) - 2001
- [j3]Hiroki Fujisawa, Tsugio Takahashi, Masayuki Nakamura, Kazuhiko Kajigaya:
A dual-phase-controlled dynamic latched amplifier for high-speed and low-power DRAMs. IEEE J. Solid State Circuits 36(7): 1120-1126 (2001) - [j2]Tsugio Takahashi, Tomonori Sekiguchi, Riichiro Takemura, Seiji Narui, Hiroki Fujisawa, Shinichi Miyatake, Makoto Morino, Koji Arai, Satoru Yamada, Shoji Shukuri, Masayuki Nakamura, Yoshitaka Tadaki, Kazuhiko Kajigaya, Katsutaka Kimura, Kiyoo Itoh:
A multigigabit DRAM technology with 6F2 open-bitline cell, distributed overdriven sensing, and stacked-flash fuse. IEEE J. Solid State Circuits 36(11): 1721-1727 (2001)
1990 – 1999
- 1997
- [j1]Hiroki Fujisawa, Takeshi Sakata, Tomonori Sekiguchi, Osamu Nagashima, Katsutaka Kimura, Kazuhiko Kajigaya:
The charge-share modified (CSM) precharge-level architecture for high-speed and low-power ferroelectric memory. IEEE J. Solid State Circuits 32(5): 655-661 (1997)
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