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Mohamed Hussein Eissa
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2020 – today
- 2023
- [c13]Batuhan Sutbas, Mohamed Hussein Eissa, Gerhard Kahmen:
A Ka-Band VCO Chip with Integrated Dividers Using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors. BCICTS 2023: 102-105 - [c12]Batuhan Sutbas, Mohamed Hussein Eissa, Gerhard Kahmen:
Vector Modulator Based Leakage Cancellation Technique for CW Radar Transceiver Frontends. RWS 2023: 88-90 - 2021
- [j5]Klaus Schmalz
, Nick Rothbart
Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz. IEEE Access 9: 124805-124816 (2021) - [j4]Ahmad Gomaa, Ayman Elezabi, Mohamed Hussein Eissa
Low-complexity subspace method for I/Q imbalance estimation in low-IF receivers with unknown fading. Trans. Emerg. Telecommun. Technol. 32(3) (2021) - [c11]Alper Karakuzulu, Mohamed Hussein Eissa, Dietmar Kissinger, Andrea Malignaggi:
A Broadband 110-170 GHz Frequency Multiplier by 4 Chain with 8 dBm Output Power in 130 nm BiCMOS. ESSCIRC 2021: 451-454 - [c10]Aniello Franzese, Mohamed Hussein Eissa, Dietmar Kissinger, Andrea Malignaggi:
Vector Modulator Phase Shifters in 130-nm SiGe BiCMOS Technology for 5G Applications. RWS 2021: 64-66 - [c9]Nebojsa Maletic, Mohamed Hussein Eissa, Lukasz Lopacinski, Vladica Sark, Jesús Gutiérrez, Eckhard Grass:
OFDM Transmission over a Short-Range 240 GHz Wireless Link: Performance Analysis. WSA 2021: 1-5 - 2020
- [c8]Aniello Franzese, Mohamed Hussein Eissa, Thomas Mausolf, Dietmar Kissinger, Renato Negra, Andrea Malignaggi:
Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS. BCICTS 2020: 1-4 - [c7]Ahmed Gadallah, Mohamed Hussein Eissa, Dietmar Kissinger, Andrea Malignaggi
A V-band Bidirectional Amplifier-Module for Hybrid Phased-Array Systems in BiCMOS Technology. RWS 2020: 330-333
2010 – 2019
- 2019
- [j3]Lukasz Lopacinski
Data Link Layer Processor for 100 Gbps Terahertz Wireless Communications in 28 nm CMOS Technology. IEEE Access 7: 44489-44502 (2019) - [c6]Lukasz Lopacinski, Mohamed Hussein Eissa, Goran Panic, Alireza Hasani, Rolf Kraemer:
Modular Data Link Layer Processing for THz communication. DDECS 2019: 1-5 - [c5]Mohamed Hussein Eissa, Dietmar Kissinger:
A 13.5dBm Fully Integrated 200-to-255GHz Power Amplifier with a 4-Way Power Combiner in SiGe: C BiCMOS. ISSCC 2019: 82-84 - 2018
- [j2]Maciej Kucharski
D-Band Frequency Quadruplers in BiCMOS Technology. IEEE J. Solid State Circuits 53(9): 2465-2478 (2018) - [j1]Mohamed Hussein Eissa
Wideband 240-GHz Transmitter and Receiver in BiCMOS Technology With 25-Gbit/s Data Rate. IEEE J. Solid State Circuits 53(9): 2532-2542 (2018) - [c4]Rahul Kumar Yadav, Jan Wessel, Mohamed Hussein Eissa, Farabi Ibne Jamal, Maciej Kucharski, Dietmar Kissinger:
A 30 GHz Power Detector based Reflectometer in 130nm SiGe BiCMOS for Dielectric Spectroscopy. ISCAS 2018: 1-4 - [c3]Lukasz Lopacinski, Mohamed Hussein Eissa, Goran Panic, Marcin Brzozowski, Alireza Hasani, Rolf Kraemer:
Implementation of a Multi-Core Data Link Layer Processor for THz Communication. VTC Spring 2018: 1-5 - 2017
- [c2]Farabi Ibne Jamal, Mohamed Hussein Eissa, Johannes Borngräber, Herman Jalli Ng, Dietmar Kissinger, Jan Wessel:
A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications. RWS 2017: 94-97 - 2016
- [c1]Mohamed Hussein Eissa, Ahmed Awny, Georg Winzer, Marcel Kroh, Stefan Lischke, Dieter Knoll, Lars Zimmermann, Dietmar Kissinger, Ahmet Cagri Ulusoy:
A wideband monolithically integrated photonic receiver in 0.25-µm SiGe: C BiCMOS technology. ESSCIRC 2016: 487-490
Coauthor Index
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