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R. S. Gupta
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2020 – today
- 2023
- [j31]Prajvi Udar, Anubha Goel, R. S. Gupta:
Quantum Effect Dependent Modelling of Short Channel Junctionless Double Gate Stack(SC-JL-DG) MOSFET for High Frequency Analog Applications. Microelectron. J. 134: 105726 (2023) - [j30]Swati Sharma, Vandana Nath, S. S. Deswal, R. S. Gupta:
Analytical modelling, simulation, and characterization of temperature-dependent GaN-HK-SBNWFET for high-frequency application. Microelectron. J. 137: 105797 (2023) - [j29]Amit Das, Sonam Rewari, Binod Kumar Kanaujia, S. S. Deswal, R. S. Gupta:
Ge/Si interfaced label free nanowire BIOFET for biomolecules detection - analytical analysis. Microelectron. J. 138: 105832 (2023) - [j28]Nisha Chugh, Subhasis Haldar, Monika Bhattacharya, R. S. Gupta:
Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach. Microelectron. J. 138: 105857 (2023) - [j27]Sumedha Gupta, Neeta Pandey, R. S. Gupta:
Modeling of Dual- Metal Junctionless Accumulation-Mode cylindrical surrounding gate (DM-JAM-CSG) MOSFET for cryogenic temperature applications. Microelectron. J. 139: 105880 (2023) - [j26]Prajvi Udar, Anubha Goel, R. S. Gupta:
Nanoscale Temperature Dependent Quantum-Effect Analytical Model of Short- Channel, Junction-Less, Double-Gate Stack (SC-JL-DG) MOSFET for Analog Applications at Higher Frequencies. Microelectron. J. 141: 105952 (2023) - 2022
- [j25]Swati Sharma, Vandana Nath, S. S. Deswal, R. S. Gupta:
Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered- Schottky nano-wire fet(GaN-GME-DE-SNW-fet) based label-free biosensor. Microelectron. J. 129: 105599 (2022)
2010 – 2019
- 2018
- [c3]Pritam Sharma, Neetika Sharma, R. S. Gupta, Jyotika Jogi:
Simulating Optical Behavior of Nano Dimensional InAlAs/InGaAs HEMT for IoT Applications. UKSim 2018: 181-185 - 2015
- [c2]Jay Hind K. Verma, Mridula Gupta, Subhasis Haldar, R. S. Gupta:
Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications. ICM 2015: 186-189 - 2014
- [j24]Yogesh Pratap, Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta:
An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering. Microelectron. J. 45(4): 408-415 (2014) - [j23]Manoj Kumar, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation. Microelectron. J. 45(11): 1508-1514 (2014) - [j22]Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta:
Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity. Microelectron. Reliab. 54(1): 37-43 (2014) - 2013
- [j21]Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta:
Drain current model for a gate all around (GAA) p-n-p-n tunnel FET. Microelectron. J. 44(6): 479-488 (2013) - [j20]Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta:
Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter. Microelectron. Reliab. 53(2): 236-244 (2013) - 2012
- [j19]Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta:
An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET. Microelectron. J. 43(1): 17-24 (2012) - [j18]Priyanka Malik, R. S. Gupta, Rishu Chaujar, Mridula Gupta:
AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications. Microelectron. Reliab. 52(1): 151-158 (2012) - [j17]Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta:
Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range. Microelectron. Reliab. 52(6): 974-983 (2012) - [j16]Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta:
Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis. Microelectron. Reliab. 52(6): 989-994 (2012) - [j15]Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta:
Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications. Microelectron. Reliab. 52(8): 1610-1612 (2012) - [j14]Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta:
Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor. Microelectron. Reliab. 52(8): 1617-1620 (2012) - [c1]Neha Verma, Jyotika Jogi, Mridula Gupta, R. S. Gupta:
Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT. UKSim 2012: 660-664 - 2011
- [j13]Sona P. Kumar, Anju Agrawal, Rishu Chaujar, R. S. Gupta, Mridula Gupta:
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor. Microelectron. Reliab. 51(3): 587-596 (2011)
2000 – 2009
- 2009
- [j12]S. U. Siddiqui, N. K. Verma, Shailesh Mishra, R. S. Gupta:
Mathematical modelling of pulsatile flow of Casson's fluid in arterial stenosis. Appl. Math. Comput. 210(1): 1-10 (2009) - [j11]Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta, R. S. Gupta:
Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect. Microelectron. Reliab. 49(7): 699-706 (2009) - [j10]Servin Rathi, Jyotika Jogi, Mridula Gupta, R. S. Gupta:
Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT. Microelectron. Reliab. 49(12): 1508-1514 (2009) - 2008
- [j9]Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R. S. Gupta:
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency. Microelectron. J. 39(12): 1416-1424 (2008) - 2007
- [j8]Harsupreet Kaur, Sneha Kabra, Subhasis Haldar, R. S. Gupta:
An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET. Microelectron. J. 38(3): 352-359 (2007) - [j7]Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
Two-dimensional subthreshold analysis of sub-micron GaN MESFET. Microelectron. J. 38(4-5): 547-555 (2007) - [j6]Parvesh Gangwani, Sujata Pandey, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications. Microelectron. J. 38(8-9): 848-854 (2007) - [j5]Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta, R. S. Gupta:
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation. Microelectron. J. 38(10-11): 1013-1020 (2007) - 2006
- [j4]Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. Microelectron. J. 37(7): 620-626 (2006) - [j3]Ritesh Gupta, Sandeep k. Aggarwal, Mridula Gupta, R. S. Gupta:
An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability. Microelectron. J. 37(9): 919-929 (2006) - [j2]Sona P. Kumar, Anju Agrawal, Sneha Kabra, Mridula Gupta, R. S. Gupta:
An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications. Microelectron. J. 37(11): 1339-1346 (2006) - 2003
- [j1]N. Kaushik, A. Kranti, Mridula Gupta, R. S. Gupta:
Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor. Microelectron. J. 34(1): 77-83 (2003)
Coauthor Index
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