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Lee Cleveland
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2020 – today
- 2022
- [c5]James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen:
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. IRPS 2022: 36-1 - 2021
- [c4]Hitoshi Saito, Jun'ichi Watanabe, J. Seino, Tetsuro Tamura, Naoya Sashida, Kota Hara, Kuninori Kawabata, Atsushi Fujii, Jun Ohno, Atsushi Nakakubo, Manabu Kojima, T. Shimoyama, H. Wada, Lee Cleveland, H. Luan, R. Sen, N. Leong, T. Gallagher, Thomas Rueckes:
Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed. IMW 2021: 1-4 - [c3]James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen:
Mitigating switching variability in carbon nanotube memristors. IRPS 2021: 1-4 - 2020
- [c2]Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer:
Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions. IRPS 2020: 1-4
2010 – 2019
- 2017
- [c1]David C. Gilmer, Thomas Rueckes, Lee Cleveland, Darlene Viviani:
NRAM status and prospects. ICICDT 2017: 1-4 - 2013
- [j2]Edward W. Chencinski, Michael J. Anderson, Lee Cleveland, Jim Coon, David Craddock, R. E. Galbraith, Thomas A. Gregg, Thomas B. Mathias, D. F. Moertl, K. J. Oakes, M. Sabins, G. E. Sittmann, Peter G. Sutton, P. Szwed, Gary A. Tressler, Elpida Tzortzatos, Andrew Walls:
Flash storage integration in the IBM System z EC12 I/O drawer. IBM J. Res. Dev. 57(6) (2013)
2000 – 2009
- 2004
- [j1]Binh Quang Le, Michael Achter, Chin Ghee Chng, Xin Guo, Lee Cleveland, Pau-Ling Chen, Michael Van Buskirk, Robert W. Dutton:
Virtual-ground sensing techniques for a 49-ns/200-MHz access time 1.8-V 256-Mb 2-bit-per-cell flash memory. IEEE J. Solid State Circuits 39(11): 2014-2023 (2004)
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