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Weiran Kong
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2010 – 2019
- 2019
- [j9]Zhaozhao Xu
, Donghua Liu, Jun Hu, Feng Jin, Xinjie Yang, Wenting Duan, Wei Yue, Ziquan Fang, Wensheng Qian, Weiran Kong, Shichang Zou:
Demonstration of improvement of specific on-resistance versus breakdown voltage tradeoff for low-voltage power LDMOS. Microelectron. J. 88: 29-36 (2019) - 2018
- [j8]Zhaozhao Xu
Investigation and impact of LDD variations on the drain disturb in normally-on SONOS NOR flash device. Microelectron. Reliab. 84: 157-162 (2018) - [j7]Yiran Xu
A 280-KBytes Twin-Bit-Cell Embedded NOR Flash Memory With a Novel Sensing Current Protection Enhanced Technique and High-Voltage Generating Systems. IEEE Trans. Circuits Syst. II Express Briefs 65-II(11): 1569-1573 (2018) - 2017
- [j6]Yiran Xu, Wenyi Zhu, Jun Xiao, Guangjun Yang, Jian Hu, Xiaoyun Li, Weiran Kong, Shichang Zou:
Area-efficient charge pump with local boost technique for embedded flash memory. IEICE Electron. Express 14(21): 20170944 (2017) - [j5]Ruofan Dai, Yunlong Zheng, Jun He, Weiran Kong, Shichang Zou:
A duplex current-reused CMOS LNA with complementary derivative superposition technique. Int. J. Circuit Theory Appl. 45(1): 110-119 (2017) - [j4]Wenyi Zhu, Binghan Li, Tao Yu, Weiran Kong, Shichang Zou:
Investigation of read disturb in split-gate memory and its feasible solution. Microelectron. Reliab. 68: 51-56 (2017) - 2016
- [j3]Ruofan Dai, Yunlong Zheng, Jun He, Guojun Liu, Weiran Kong, Shichang Zou:
A 0.5-V novel complementary current-reused CMOS LNA for 2.4 GHz medical application. Microelectron. J. 55: 64-69 (2016) - [j2]Yiran Xu
Design Techniques for a 30-ns Access Time 1.5-V 200-KB Embedded EEPROM Memory. IEEE Trans. Circuits Syst. II Express Briefs 63-II(11): 1064-1068 (2016)
2000 – 2009
- 2008
- [j1]Zigui Cao, Bo Zhang, Xiong Zhang, Elton Lee, Weiran Kong:
Investigation of charge trapping/de-trapping induced operation lifetime degradation in triple SuperFlash® memory cell. Microelectron. Reliab. 48(11-12): 1809-1814 (2008)
Coauthor Index
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