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Microelectronics Reliability, Volume 91
Volume 91, Part 1, December 2018
- Krzysztof Górecki
, Przemyslaw Ptak
New dynamic electro-thermo-optical model of power LEDs. 1-7 - Mohamed Ali Belaïd
Performance analysis of S-parameter in N-MOSFET devices after thermal accelerated tests. 8-14 - Bruno R. Mose, In-Seo Son, Dong-Kil Shin:
Adhesion strength of die attach film for thin electronic package at elevated temperature. 15-22 - Ana Cóbreces, Alberto Regadío
Seu and Sefi error detection and correction on a ddr3 memory system. 23-30 - P. Rajendiran, R. Srinivasan:
Heavy ion impact on narrow band cascoded low noise amplifier. 31-37 - Huakai Shao, Aiping Wu, Yudian Bao, Yue Zhao, Guisheng Zou, Lei Liu:
Thermal reliability investigation of Ag-Sn TLP bonds for high-temperature power electronics application. 38-45 - Xuerong Ye, Kaixin Zhang, Cen Chen
The threshold voltage degradation model of N Channel VDMOSFETs under PBT stress. 46-51 - Si Chen
The experimental analysis and the mechanical model for the debonding failure of TSV-Cu/Si interface. 52-66
- Marta Kuczynska, Natalja Schafet, Ulrich Becker, René Metasch, Mike Roellig, Alexander Kabakchiev, Stefan Weihe:
Validation of different SAC305 material models calibrated on isothermal tests using in-situ TMF measurement of thermally induced shear load. 67-85 - Siavash Es'haghi, Mohammad Eshghi:
Lifetime-aware scheduling in high level synthesis. 86-97 - Qi Zhang, Yuping Wu, Lan Chen, Xuelian Zhang:
A robust asynchronous 16 × 16-bit subthreshold multiplier using SAPTL technique. 98-111 - Mohammad A. Gharaibeh
Analytical model for the transient analysis of electronic assemblies subjected to impact loading. 112-119 - Jiaxing Hu
Failure and failure characterization of QFP package interconnect structure under random vibration condition. 120-127
- Lorenzo Codecasa, Márta Rencz:
To the special issue constructed from the selected papers of Thermal investigations of integrated circuits and systems, THERMINIC'17. 128 - Ali Ahari
Mission profile-based assessment of semiconductor technologies for automotive applications. 129-138 - Mariusz Zubert
Methodology of determining the applicability range of the DPL model to heat transfer in modern integrated circuits comprised of FinFETs. 139-153 - Joyeeta Basu, Nirmalya Samanta, Sukhendu Jana
Towards reliability enhancement of graphene FET biosensor in complex analyte: Artificial neural network approach. 154-159 - Karkulali Pugalenthi, Nagarajan Raghavan
A holistic comparison of the different resampling algorithms for particle filter based prognosis using lithium ion batteries as a case study. 160-169 - Mengtian Bao, Ying Wang, Xingji Li, Chaoming Liu, Cheng-Hao Yu, Fei Cao:
Simulation study of single event effects in the SiC LDMOS with a step compound drift region. 170-178 - Indudhar Panduranga Vali
Implications of electron beam irradiation on Al/n-Si Schottky junction properties. 179-184
Volume 91, Part 2, December 2018
- Ze Zhu
Failure mechanisms of solder interconnects under current stressing in advanced electronic packages: An update on the effect of alternating current (AC) stressing. 179-182 - T. H. Nouibat, Zitouni Messai
Normalized differential conductance to study current conduction mechanisms in MOS structures. 183-187 - Ligang Tan, Ziwen Li, Yunxiu Xiang, Pengfei Feng, Yage Guo:
A critical analysis of the bulk current injection immunity test based on common-mode and differential-mode. 188-193 - Zheng Zhao, Ningyue Jiang, Zhenqiang Ma, Guoxuan Qin:
Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures. 194-200 - Byung-seung Yim, Young-Eui Shin, Jong-Min Kim:
Influence of multi-walled carbon nanotube (MWCNT) concentration on the thermo-mechanical reliability properties of solderable anisotropic conductive adhesives (SACAs). 201-212 - Tong An
Failure study of Sn37Pb PBGA solder joints using temperature cycling, random vibration and combined temperature cycling and random vibration tests. 213-226 - Hamed Kamrani
Thermal performance analysis of GaN nanowire and fin-shaped power transistors based on self-consistent electrothermal simulations. 227-231 - Sean P. Ogden, Yueming Xu, Kong Boon Yeap, Tian Shen, Toh-Ming Lu, Joel L. Plawsky:
Charge transport model to predict dielectric breakdown as a function of voltage, temperature, and thickness. 232-242
- Jian-Chiun Liou, Cheng-Fu Yang:
Investigation of DNA sequencing droplet trajectory observation and analysis. 243-250
- Frank Kraemer, Mike Roellig, René Metasch, Joseph Al Ahmar, Karsten Meier, Steffen Wiese
Experimental determination of the Young's modulus of copper and solder materials for electronic packaging. 251-256
- Te-Jen Su
An artificial neural network approach for wafer dicing saw quality prediction. 257-261 - Kosala Yapabandara
Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location. 262-268 - Zhizhan Yang
A novel single-event-hardened charge pump using cascode voltage switch logic gates. 269-277 - Jizuo Zhang, Jianjun Chen
Angular dependency on heavy-ion-induced single-event multiple transients (SEMT) in 65 nm twin-well and triple-well CMOS technology. 278-282 - Hyun-Woong Park, Sang-Jun Lee, Dong-Chul Cho, Sang-Hoon Lee, Jae-Kyun Kim, Jun-Hee Lee, Sang-Kyo Jung, Hong-Sik Nam, Patrick Hsu, Shin Low, Sung-Hwan Lim:
Behavior of Au and Pd and the effects of these metals on IMCs in Pd-Au-coated copper wire. 283-290 - Cuicui Hang, Liming Ying, Naiqiu Shu:
Transistor open-circuit fault diagnosis in two-level three-phase inverter based on similarity measurement. 291-297 - Shalu Kaundal, Ashwani K. Rana
Evaluation of statistical variability and parametric sensitivity of non-uniformly doped Junctionless FinFET. 298-305
- Kuan-Wei Lee, Chuan-Hsi Liu, Durga Misra:
Wide Bandgap Materials for Semiconductor Devices. 306 - Fei Yu, Chuanzhong Xu, Gongyi Huang, Wei Lin, Tsair-Chun Liang:
A closed-form trapped-charge-included drain current compact model for amorphous oxide semiconductor thin-film transistors. 307-312 - Zheng-Yuan Wu, Shiang-Feng Tang
Infrared response of vanadium oxide (VOx)/SiNx/reduced graphene oxide (rGO) composite microbolometer. 313-318 - Hsin-Kai Fang, Kuei-Shu Chang-Liao
SiO2 tunneling and Si3N4/HfO2 trapping layers formed with low temperature processes on gate-all-around junctionless charge-trapping flash memory devices. 319-322 - Dei-Wei Chou, Kuan-Lin Chen
Pentacene bottom-contact thin film transistors with solution-processed BZT gate dielectrics. 323-329 - Kai-Huang Chen
Hopping conduction distance of bipolar switching GdOx resistance random access memory thin films devices modified by different constant compliance current. 330-334 - Chin-Yi Tsai
A theoretical model for calculating the effects of carrier heating with nonequilibrium hot phonons on semiconductor devices and the current-voltage relations. 335-343
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